Keyword : HEMTs


Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
Masanobu HIROKI Narihiko MAEDA Naoteru SHIGEKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 579-584
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
GaN-based FETsHEMTsInAlNAlInNAlGaN
 Summary | Full Text:PDF(1.2MB)

Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications
J. Brad BOOS Brian R. BENNETT Nicolas A. PAPANICOLAOU Mario G. ANCONA James G. CHAMPLAIN Yeong-Chang CHOU Michael D. LANGE Jeffrey M. YANG Robert BASS Doewon PARK Ben V. SHANABROOK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1050-1057
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: 
Keyword: 
HEMTsHFETsMMICsInAsInGaSb
 Summary | Full Text:PDF(724KB)

High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire
Ilesanmi ADESIDA Vipan KUMAR Jinwei YANG Muhammed Asif KHAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1955-1959
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
GaNHEMTssapphire
 Summary | Full Text:PDF(658.1KB)

A New Method for the Determination of the Extrinsic Resistances of MESFETs and HEMTs from the Measured S-Parameters under Active Bias
Jong-Sik LIM Byung-Sung KIM Sangwook NAM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/03/01
Vol. E85-C  No. 3 ; pp. 839-846
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
small signal modelextrinsic resistancesMESFETHEMTs
 Summary | Full Text:PDF(543.1KB)

SCFL-Compatible 40-Gbit/s RTD/HEMT Selector Circuit
Kimikazu SANO Koichi MURATA Hideaki MATSUZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/10/25
Vol. E83-C  No. 10 ; pp. 1690-1692
Type of Manuscript:  LETTER
Category: Electronic Circuits
Keyword: 
resonant tunneling diodes (RTDs)HEMTsselector circuitSCFLlightwave communications
 Summary | Full Text:PDF(262.1KB)