| Keyword : HEMTs
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Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness Masanobu HIROKI Narihiko MAEDA Naoteru SHIGEKAWA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C
No. 5 ;
pp. 579-584
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices Keyword: GaN-based FETs, HEMTs, InAlN, AlInN, AlGaN, | | Summary | Full Text:PDF | |
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