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Keyword : HEMT

Possibilities of Large Voltage Swing Hard-Type Oscillators Based on Series-Connected Resonant Tunneling Diodes Koichi MAEZAWA Masayuki MORI
Publication: Publication Date: 2018/05/01 Vol. E101-C No. 5 ; pp. 305-310 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: resonant tunneling diode, hard-type oscillator, HEMT, spurious oscillation, voltage swing,
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Evaluation of Interference between Parallel 120-GHz-Band Wireless Link Systems with High-Gain Cassegrain Antennas Jun TAKEUCHI Akihiko HIRATA Hiroyuki TAKAHASHI Naoya KUKUTSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/10/01 Vol. E96-C No. 10 ; pp. 1294-1300 Type of Manuscript: Special Section PAPER (Special Section on Emerging Technologies and Applications for Microwave and Millimeter-Wave Systems) Category: Keyword: millimeter-wave radio communications, broadband communications, photodiode, HEMT,
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Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures Maiko HATANO Norimasa YAFUNE Hirokuni TOKUDA Yoshiyuki YAMAMOTO Shin HASHIMOTO Katsushi AKITA Masaaki KUZUHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/08/01 Vol. E95-C No. 8 ; pp. 1332-1336 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011) Category: GaN-based Devices Keyword: AlGaN channel, high temperature, HEMT,
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High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application Masayuki ABE Noriaki KOGUSHI Kian Siong ANG René HOFSTETTER Kumar MANOJ Louis Nicholas RETNAM Hong WANG Geok Ing NG Chon JIN Dimitris PAVLIDIS
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/08/01 Vol. E95-C No. 8 ; pp. 1354-1362 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011) Category: GaN-based Devices Keyword: Seebeck effect, heterostructure-thermopile, AlGaAs/InGaAs, AlGaN/GaN, HEMT, FPA, infrared image sensor,
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DC and RF Performance of AlN/GaN MOS-HEMTs Sanna TAKING Douglas MACFARLANE Ali Z. KHOKHAR Amir M. DABIRAN Edward WASIGE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 ; pp. 835-841 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: AlN/GaN, HEMT, MOS-HEMT, Al₂O₃, wet etching, thermal oxidation, small-signal model,
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Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes Nobuhiko TANAKA Mitsufumi SAITO Michihiko SUHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 ; pp. 820-825 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: isolator, RTD, HEMT, unidirectional characteristics, millimeter wave,
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Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs Naoteru SHIGEKAWA Suehiro SUGITANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/08/01 Vol. E93-C No. 8 ; pp. 1212-1217 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009) Category: GaN-based Devices Keyword: GaN, HEMT, threshold voltage, piezoelectric effects, film stress,
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Theoretical Study on Performance Limit of Cutoff Frequency in Nano-Scale InAs HEMTs Based on Quantum-Corrected Monte Carlo Method Takayuki TAKEGISHI Hisanao WATANABE Shinsuke HARA Hiroki I. FUJISHIRO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/08/01 Vol. E93-C No. 8 ; pp. 1258-1265 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009) Category: III-V High-Speed Devices and Circuits Keyword: quantum-corrected Monte Carlo, HEMT, InAs, InGaAs, delay time, cutoff frequency,
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The 8th Harmonic Push-Push Oscillator in V Band Kengo KAWASAKI Takayuki TANAKA Masayoshi AIKAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/07/01 Vol. E93-C No. 7 ; pp. 1000-1006 Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies) Category: Keyword: Push-Push oscillator, HEMT, millimeter-wave oscillator,
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Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures Hironari CHIKAOKA Yoichi TAKAKUWA Kenji SHIOJIMA Masaaki KUZUHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 ; pp. 691-695 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: GaN, HEMT, potential barrier, contact resistance, tunneling current density,
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Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer Masafumi ITO Shigeru KISHIMOTO Fumihiko NAKAMURA Takashi MIZUTANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-C No. 7 ; pp. 989-993 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Nitride-based Devices Keyword: normally-off, AlGaN/GaN, HEMT, InGaN cap,
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Monolithic Gyrators Using Resonant Tunneling Diodes and Application to Active Inductors Michihiko SUHARA Eri UEKI Tsugunori OKUMURA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-C No. 7 ; pp. 1070-1075 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Emerging Devices Keyword: gyrator, active inductors, resonant tunneling diode, HEMT, millimeter wave,
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A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch Koichi MAEZAWA Ikuo SOGA Shigeru KISHIMOTO Takashi MIZUTANI Kazuhiro AKAMATSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-C No. 7 ; pp. 1025-1030 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Novel Integration Technology Keyword: heterogeneous integration, fluidic self-assembly, HEMT, SPDT switch, SOI,
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A Design of HEMT Comparators for Ultrahigh-Speed A/D Conversion Hiroshi WATANABE Shunsuke NAKAMURA Takao WAHO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 ; pp. 688-692 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: comparator, D-latch, HEMT, analog-to-digital converter,
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InP HEMT Technology for High-Speed Logic and Communications Tetsuya SUEMITSU Masami TOKUMITSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 ; pp. 917-922 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Compound Semiconductor and Power Devices Keyword: HEMT, InP, cutoff frequency, OEIC,
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Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage Yong CAI Yugang ZHOU Kei May LAU Kevin J. CHEN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 ; pp. 1025-1030 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: GaN-Based Devices Keyword: enhancement mode, AlGaN/GaN, HEMT, fluoride, plasma treatment, threshold voltage,
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Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications Oktay YILMAZOGLU Kabula MUTAMBA Dimitris PAVLIDIS Marie Rose MBARGA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 ; pp. 1037-1041 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: GaN-Based Devices Keyword: GaN, pressure sensor, HEMT, Schottky diode,
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Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer Mitsuhiro HANABE Takuya NISHIMURA Masaki MIYAMOTO Taiichi OTSUJI Eiichi SANO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 ; pp. 985-992 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: THz Devices Keyword: plasmon resonance, photomixer, terahertz, grating, HEMT,
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Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs Hideaki MATSUZAKI Takashi MARUYAMA Takatomo ENOKI Masami TOKUMITSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 ; pp. 949-953 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: Millimeter-Wave Devices Keyword: HEMT, InP, InGaAs, InAlAs, lattice-matched, current gain cutoff frequency,
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Novel Devices for (Sub)millimeter-Wave Space Applications Jan V. GRAHN Piotr STARSKI Jan STAKE T. Sergey CHEREDNICHENKO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 ; pp. 891-897 Type of Manuscript: INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: Keyword: submillimeter, space, HEMT, HBV, HEB,
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Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy Andrea CORRION Christiane POBLENZ Patrick WALTEREIT Tomas PALACIOS Siddharth RAJAN Umesh K. MISHRA Jim S. SPECK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 ; pp. 906-912 Type of Manuscript: INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: Keyword: MBE, Gallium Nitride, HEMT, microwave, MBE,
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High Power GaN-HEMT for Wireless Base Station Applications Toshihide KIKKAWA Kazukiyo JOSHIN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/05/01 Vol. E89-C No. 5 ; pp. 608-615 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Compound Semiconductor Devices Keyword: GaN, HEMT, base station, amplifier, W-CDMA,
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Design of Flash Analog-to-Digital Converters Using Resonant-Tunneling Circuits Yuuki TSUJI Takao WAHO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/11/01 Vol. E87-C No. 11 ; pp. 1863-1868 Type of Manuscript: Special Section PAPER (Special Section on New System Paradigms for Integrated Electronics) Category: Keyword: resonant-tunneling diode, flash analog-to-digital converter, HEMT, InP, multi-input gate,
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A V-band Monolithic HEMT Amplifier Using Two Types of RF Grounds Naoko ONO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/06/01 Vol. E87-C No. 6 ; pp. 1010-1012 Type of Manuscript: Special Section LETTER (Special Section on Analog Circuit and Device Technologies) Category: Keyword: RF ground, HEMT, coplanar waveguide, amplifier, V-band,
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Millimeter-Wave Monolithic GaAs HEMT Medium-Power Amplifier Having Low-Loss, CRC High-Pass Equalizer Circuits Naoko ONO Ken ONODERA Kazuhiro ARAI Keiichi YAMAGUCHI Hiroyuki YOSHINAGA Yuji ISEKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/05/01 Vol. E87-C No. 5 ; pp. 733-741 Type of Manuscript: Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits) Category: Active Devices and Circuits Keyword: K-band, driver amplifier, filter circuit, HEMT,
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Characteristics of GaAs HEMTs with Flip-Chip Interconnections Naoko ONO Fumio SASAKI Kazuhiro ARAI Hiroyuki YOSHINAGA Yuji ISEKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/12/01 Vol. E86-C No. 12 ; pp. 2452-2461 Type of Manuscript: Special Section PAPER (Special Issue on Recent Trends on Microwave and Millimeter Wave Application Technology) Category: Amplifier Keyword: GaAs, HEMT, flip-chip interconnection, current path, inverted microstrip line,
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Double-Recess Structure with an InP Passivation Layer for 0.1-µm-Gate InP HEMTs Hiroto KITABAYASHI Suehiro SUGITANI Yoshino K. FUKAI Yasuro YAMANE Takatomo ENOKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 2000-2003 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: double-recess, InP-passivation layer, HEMT, breakdown voltage,
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Effect of Heterostructure 2-D Electron Confinement on the Tunability of Resonant Frequencies of Terahertz Plasma-Wave Transistors Taiichi OTSUJI Yoshihiro KANAMARU Hajime KITAMURA Mitsuru MATSUOKA Osamu OGAWARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 1985-1993 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: plasma wave, resonance, FET, HEMT, Terahertz, polariton, harmonic resonance,
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HEMT: Looking Back at Its Successful Commercialization Takashi MIMURA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 1908-1910 Type of Manuscript: INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: high electron mobility transistor, HEMT, GaAs MESFET, radio telescope, broadcasting satellite,
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High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates Masahiro SAKAI Kenta ASANO Subramaniam ARULKUMARAN Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO Tomohiko SHIBATA Mitsuhiro TANAKA Osamu ODA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 2071-2076 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: AlGaN/GaN, HEMT, AlN, template,
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Analytical Expressions for Maximum Operating Frequencies of Emitter-Coupled Logic and Source-Coupled FET Logic Toggle Flip-Flops Eiichi SANO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/09/01 Vol. E86-C No. 9 ; pp. 1879-1885 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: bipolar transistor, HBT, HEMT, digital circuit, propagation delay, flip-flop,
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Gate Tunnelling and Impact Ionisation in Sub 100 nm PHEMTs Karol KALNA Asen ASENOV
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/03/01 Vol. E86-C No. 3 ; pp. 330-335 Type of Manuscript: Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02)) Category: Keyword: impact ionisation, gate tunnelling current, HEMT, Monte Carlo device simulations,
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V-Band HEMT MMICs Using BCB Thin-Film Layers on GaAs Substrates Naoko ONO Keiichi YAMAGUCHI Minoru AMANO Masayuki SUGIURA Yuji ISEKI Eiji TAKAGI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 ; pp. 1528-1534 Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century) Category: Keyword: BCB, thin-film layer, V-band, HEMT, MMIC,
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Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs Tetsuya SUEMITSU Tetsuyoshi ISHII Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 ; pp. 1283-1288 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Hetero-FETs & Their Integrated Circuits Keyword: high-speed devices, millimeter wave FETs, HEMT, indium phosphide,
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A 15-50 GHz-Band GaAs MMIC Variable Attenuator with 20-dB Attenuation Control Kazuya NISHIHORI Shigeru WATANABE Fumio SASAKI Kazuhiro ARAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 ; pp. 1543-1547 Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century) Category: Keyword: microwave and millimeter-wave, variable attenuator, GaAs MMIC, HEMT, balanced distributed configuration,
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Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs Takashi MIZUTANI Makoto YAMAMOTO Shigeru KISHIMOTO Koichi MAEZAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 ; pp. 1318-1322 Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Hetero-FETs & Their Integrated Circuits Keyword: low-frequency noise, HEMT, Arrhenius plot, DX center, Lorentz noise,
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High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs Akira ENDOH Yoshimi YAMASHITA Masataka HIGASHIWAKI Kohki HIKOSAKA Takashi MIMURA Satoshi HIYAMIZU Toshiaki MATSUI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 ; pp. 1328-1334 Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Hetero-FETs & Their Integrated Circuits Keyword: InAlAs/InGaAs, InP, HEMT, cutoff frequency, low-temperature fabrication process,
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RF Characterisation and Transient Behaviour of AlGaN/GaN Power HFETs Helmut LEIER Andrei VESCAN Ron DIETRICH Andreas WIESZT Hardy Hans SLEDZIK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 ; pp. 1442-1447 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Novel Electron Devices Keyword: AlGaN/GaN, HFET, HEMT, microwave power,
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A Compact 40 GHz MMIC Power Amplifier with Improved Power Stage Design Yasushi SHIZUKI Ken ONODERA Fumio SASAKI Kazuhiro ARAI Hiroyuki YOSHINAGA Juichi OZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 ; pp. 1535-1542 Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century) Category: Keyword: MMIC, power amplifier, HEMT, millimeter wave, device modeling,
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Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure Kenji SHIOJIMA Naoteru SHIGEKAWA Tetsuya SUEMITSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/12/25 Vol. E83-C No. 12 ; pp. 1968-1970 Type of Manuscript: LETTER Category: Semiconductor Materials and Devices Keyword: GaN, HEMT, buried p-layer, carrier confinement,
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Low-Voltage, Low-Power, High-Speed 0.25-µm GaAs HEMT Delay Flip-Flops Tadayoshi ENOMOTO Atsunori HIROBE Masahiro FUJII Nobuhide YOSHIDA Shuji ASAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/11/25 Vol. E83-C No. 11 ; pp. 1776-1787 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: GaAs, HEMT, delay latch, delay flip-flop, power dissipation,
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10-Gbit/s InP-Based High-Performance Monolithic Photoreceivers Consisting of p-i-n Photodiodes and HEMT's Kiyoto TAKAHATA Yoshifumi MURAMOTO Kazutoshi KATO Yuji AKATSU Atsuo KOZEN Yuji AKAHORI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/06/25 Vol. E83-C No. 6 ; pp. 950-958 Type of Manuscript: Special Section PAPER (Special Issue on Advanced Optical Devices for Next Generation High-Speed Communication Systems and Photonic Networks) Category: High-Speed Optical Devices Keyword: integrated optoelectronics, optical receivers, waveguide p-i-n photodiodes, HEMT,
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GaN-Based FETs for Microwave Power Amplification Yi-Feng WU Bernd P. KELLER Stacia KELLER Jane J. XU Brian J. THIBEAULT Steven P. DENBAARS Umesh K. MISHRA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/11/25 Vol. E82-C No. 11 ; pp. 1895-1905 Type of Manuscript: INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century) Category: RF Power Devices Keyword: GaN, FET, HEMT, power device, amplifier, microwave,
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InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond Eiichi SANO Yasuro YAMANE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/11/25 Vol. E82-C No. 11 ; pp. 1879-1885 Type of Manuscript: INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century) Category: Information and Communication System Keyword: InP, HEMT, analog IC, digital IC, packaging,
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Application of 1.55-µm Photonic Technology to Practical Millimeter-Wave Network Analysis Nabil SAHRI Tadao NAGATSUMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/07/25 Vol. E82-C No. 7 ; pp. 1307-1311 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology) Category: Measurements Keyword: millimeter wave, network-analyzer, electro-optic sampling, HEMT,
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49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs Yohtaro UMEDA Kazuo OSAFUNE Takatomo ENOKI Haruki YOKOYAMA Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/07/25 Vol. E82-C No. 7 ; pp. 1080-1085 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology) Category: Active Devices and Circuits Keyword: InP, HEMT, IC, interconnection, delay, static frequency divider,
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60-GHz-Band Monolithic HEMT Amplifiers Using BCB Thin Film Layers on GaAs Substrates Naoko ONO Yumi FUCHIDA Junko ONOMURA Minoru AMANO Masayuki SUGIURA Kunio YOSHIHARA Eiji TAKAGI Mitsuo KONNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/07/25 Vol. E82-C No. 7 ; pp. 1073-1079 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology) Category: Active Devices and Circuits Keyword: BCB, V-band, HEMT, MMIC, amplifier,
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Noise Modelling in Linear and Nonlinear Devices Alain CAPPY Francois DANNEVILLE Gilles DAMBRINE Beaudouin TAMEN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-C No. 6 ; pp. 900-907 Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: noise, HEMT, HBT, amplifier, mixer,
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10-GHz Operation of Multiple-Valued Quantizers Using Resonant-Tunneling Devices Toshihiro ITOH Takao WAHO Koichi MAEZAWA Masafumi YAMAMOTO
Publication: IEICE TRANSACTIONS on Information and Systems Publication Date: 1999/05/25 Vol. E82-D No. 5 ; pp. 949-954 Type of Manuscript: Special Section PAPER (Special Issue on Multiple-Valued Logic and Its Applications) Category: Circuits Keyword: resonant tunneling diode, HEMT, multiple-valued logic, negative differential resistance,
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Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems Yohtaro UMEDA Takatomo ENOKI Taiichi OTSUJI Tetsuya SUEMITSU Haruki YOKOYAMA Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/25 Vol. E82-C No. 3 ; pp. 409-418 Type of Manuscript: INVITED PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Keyword: InP, HEMT, IC, optical communication, delay,
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5 Gsps Oversampling Analog-to-Digital Converters with Polarity Alternating Feedback Comparator Takumi MIYASHITA Alfredo OLMOS Mizuhisa NIHEI Yuu WATANABE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/25 Vol. E82-C No. 3 ; pp. 483-490 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Compound Semiconductor Devices Keyword: compound-semiconductor, HEMT, over-sampling, data-converter, A/D converter, CDMA,
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0. 1 µm-Gate InGaP/InGaAs HEMT Technology for Millimeter-Wave Applications Naoki HARADA Tamio SAITO Hideyuki OIKAWA Yoji OHASHI Yuji AWANO Masayuki ABE Kohki HIKOSAKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/06/25 Vol. E81-C No. 6 ; pp. 876-881 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology) Category: Semiconductor Devices and Amplifiers Keyword: mm-wave, MMIC, HEMT, InGaP, low noise amplifier,
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Design of a K-Band Power Amplifier Using On-Wafer-Tuning Load-Pull Method Minoru IDA Masashi NAKATSUGAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/06/25 Vol. E81-C No. 6 ; pp. 882-885 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology) Category: Semiconductor Devices and Amplifiers Keyword: power amplifier, load-pull measurement, on-wafer, MMIC, HEMT,
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Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs Kevin Jing CHEN Koichi MAEZAWA Takao WAHO Masafumi YAMAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/11/25 Vol. E79-C No. 11 ; pp. 1515-1524 Type of Manuscript: Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies) Category: Keyword: RTD, HEMT, negative differential resistance, negative transconductance, quantum functional devices,
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60-GHz Virtual Common-Drain-Biased Oscillator Design Using an Empirical HEMT Model Kazuo SHIRAKAWA Yoshihiro KAWASAKI Masahiko SHIMIZU Yoji OHASHI Tamio SAITO Naofumi OKUBO Yashimasa DAIDO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/08/25 Vol. E79-C No. 8 ; pp. 1144-1151 Type of Manuscript: PAPER Category: Microwave and Millimeter Wave Technology Keyword: HEMT, large-signal, Millimeter-wave, oscillator, virtual common-drain,
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A Decision Circuit with Phase Detectors for 10-Gb/s Optical Communication Systems Makoto SHIKATA Akira NISHINO Ryoji SHIGEMASA Tamotsu KIMURA Takashi USHIKUBO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/04/25 Vol. E79-C No. 4 ; pp. 496-502 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed LSIs) Category: Keyword: GaAs, HEMT, DCFL, optical communication, decision circuit,
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A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching Naohito YOSHIDA Toshiaki KITANO Yoshitsugu YAMAMOTO Takayuki KATOH Hiroyuki MINAMI Takuo KASHIWA Takuji SONODA Hirozo TAKANO Osamu ISHIHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/09/25 Vol. E78-C No. 9 ; pp. 1279-1285 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: HEMT, AlInAs/InGaAs, InP, low-noise, selectiverecess,
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60-GHz HEMT-Based MMIC One-Chip Receiver Tamio SAITO Norio HIDAKA Yoji OHASHI Kazuo SHIRAKAWA Yoshihiro KAWASAKI Toshihiro SHIMURA Hideyuki OIKAWA Yoshio AOKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/09/25 Vol. E78-C No. 9 ; pp. 1216-1222 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices) Category: Keyword: HEMT, MMIC, millimeter-wave, receiver,
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Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer Kazuhiko NAKAHARA Yasushi ITOH Yoshie HORIIE Takeshi SAKURA Naohito YOSHIDA Takayuki KATOH Tadashi TAKAGI Yasuo MITSUI Yasuyuki ITO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/09/25 Vol. E78-C No. 9 ; pp. 1210-1215 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices) Category: Keyword: amplifier, low noise, MMIC, millimeter-wave, HEMT,
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Monolithic Integration of Resonant Tunneling Diode and HEMT for Low-Voltage, Low-Power Digital Circuits Yuu WATANABE Yasuhiro NAKASHA Kenji IMANISHI Masahiko TAKIKAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/04/25 Vol. E78-C No. 4 ; pp. 368-373 Type of Manuscript: Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits) Category: Device Technology Keyword: RTD, HEMT, SRAM, negative differential resistance, digital circuits,
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Nonalloyed Ohmic Contacts for HEMTs Using n⁺-lnGaAs Layers Grown by MOVPE Mizuhisa NIHEI Naoki HARA Haruyoshi SUEHIRO Shigeru KURODA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/09/25 Vol. E77-C No. 9 ; pp. 1431-1436 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques) Category: Keyword: nonalloyed ohmic contact, n⁺-InGaAs, MOVPE, HEMT,
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Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation Yasunobu SAITO Fumio SASAKI Hisao KAWASAKI Hiroshi ISHIMURA Hirokuni TOKUDA Motoharu OHTOMO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/09/25 Vol. E76-C No. 9 ; pp. 1379-1383 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Electron Devices) Category: Keyword: reliability, HEMT, γ-ray, degradation,
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Wideband High Power Amplifier Design Using Novel Band-Pass Filters with FET's Parasitic Reactances Yasushi ITOH Tadashi TAKAGI Hiroyuki MASUNO Masaki KOHNO Tsutomu HASHIMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/06/25 Vol. E76-C No. 6 ; pp. 938-943 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions) Category: Keyword: amplifier, wideband, high power, HEMT, bandpass filter,
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N-InAlAs/InGaAs HEMT DCFL Inverter Fabricated Using Pt-Based Gate and Photochemical Dry Etching Naoki HARADA Shigeru KURODA Kohki HIKOSAKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/10/25 Vol. E75-C No. 10 ; pp. 1165-1171 Type of Manuscript: Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits) Category: Keyword: HEMT, InGaAs, Schottky junction, DCEL, dry etching,
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Silicon Nitride Passivated Ultra Low Noise InAlAs/InGaAs HEMT's with n⁺-InGaAs/n⁺-InAlAs Cap Layer Yohtaro UMEDA Takatomo ENOKI Kunihiro ARAI Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/06/25 Vol. E75-C No. 6 ; pp. 649-655 Type of Manuscript: Special Section PAPER (Special Issue on MMIC Technology) Category: Keyword: InGaAs, HEMT, low noise, equivalent circuit, InP,
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