Keyword : HBT


Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
Kenji KURISHIMA Minoru IDA Norihide KASHIO Yoshino K. FUKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1310-1316
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: III-V High-Speed Devices and Circuits
Keyword: 
InPInGaAsHBTturn-on voltage
 Summary | Full Text:PDF

Distortion Compensation for Thermal Memory Effect on InGaP/GaAs HBT Amplifier by Inserting RC-Ladder Circuit in Base Bias Circuit
Ryo ISHIKAWA Junichi KIMURA Yukio TAKAHASHI Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/07/01
Vol. E93-C  No. 7 ; pp. 958-965
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
thermal memory effectIMDdistortion compensationself heatingpower amplifiersHBT
 Summary | Full Text:PDF

Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
Yasuyuki MIYAMOTO Shinnosuke TAKAHASHI Takashi KOBAYASHI Hiroyuki SUZUKI Kazuhito FURUYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 644-647
Type of Manuscript:  BRIEF PAPER
Category: Compound Semiconductor Devices
Keyword: 
InGaAs/InPHBTKirk effectcurrent spreading
 Summary | Full Text:PDF

An Optical Transimpedance Amplifier Using an Inductive Buffer Stage Technique
Sang Hyun PARK Quan LE Bo-Hun CHOI 
Publication:   IEICE TRANSACTIONS on Communications
Publication Date: 2009/06/01
Vol. E92-B  No. 6 ; pp. 2239-2242
Type of Manuscript:  LETTER
Category: Devices/Circuits for Communications
Keyword: 
transimpedance amplifieroptical communicationsHBTgain
 Summary | Full Text:PDF

Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio
Dong-Shong LIANG Kwang-Jow GAN Cheng-Chi TAI Cher-Shiung TSAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5 ; pp. 635-638
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
negative differential resistance (NDR)MOSHBTBiCMOS
 Summary | Full Text:PDF

Large Signal Evaluation of Nonlinear HBT Model
Iltcho ANGELOV Akira INOUE Shinsuke WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1091-1097
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaAs- and InP-Based Devices
Keyword: 
HBTlarge signal modelbipolar transistor modelsnonlinear circuits
 Summary | Full Text:PDF

InGaP/GaAs HBT MMIC Amplifier with Active Balun for Ultra-Wideband Self-Complementary Antenna
Itaru NAKAGAWA Ryo ISHIKAWA Kazuhiko HONJO Masao SHIMADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/12/01
Vol. E89-C  No. 12 ; pp. 1814-1820
Type of Manuscript:  Special Section PAPER (Special Section on Emerging Microwave Techniques)
Category: Active Circuits/Devices/Monolithic Microwave Integrated Circuits
Keyword: 
broadband amplifierUWBactive balunHBTmicrowaveself-complementary antenna
 Summary | Full Text:PDF

Collector Doping Design for Improving DC and RF Performance in InGaP/GaAs HBTs before Onset of Kirk Effect
Che-ming WANG Kuang-Po HSUEH Yue-ming HSIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/08/01
Vol. E88-C  No. 8 ; pp. 1790-1792
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
HBTKirk effectcollector doping
 Summary | Full Text:PDF

A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35 µm SiGe HBT Technology
Tzung-Han WU Chinchun MENG Tse-Hung WU Guo-Wei HUANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/06/01
Vol. E88-C  No. 6 ; pp. 1267-1270
Type of Manuscript:  Special Section LETTER (Special Section on Analog Circuit and Device Technologies)
Category: RF
Keyword: 
SiGeHBTGilbert mixer
 Summary | Full Text:PDF

Composite-Collector InGaP/GaAs HBTs for Linear Power Amplifiers
Takaki NIWA Takashi ISHIGAKI Naoto KUROSAWA Hidenori SHIMAWAKI Shinichi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 672-677
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
HBTgallium arsenideruggednessbreakdown voltagelinearitycomposite collectorWCDMA
 Summary | Full Text:PDF

Lateral and Vertical Scaling of High-fmax InP-Based HBTs
Shinichi TANAKA Yoshifumi IKENAGA Akira FUJIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/06/01
Vol. E87-C  No. 6 ; pp. 924-928
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
Category: 
Keyword: 
HBTindium phosphide (InP)maximum frequency of oscillationscaling
 Summary | Full Text:PDF

The Maximum Operating Region in SiGe HBTs for RF Power Amplifiers
Akira INOUE Shigenori NAKATSUKA Takahide ISHIKAWA Yoshio MATSUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/05/01
Vol. E87-C  No. 5 ; pp. 714-719
Type of Manuscript:  Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
Category: Active Devices and Circuits
Keyword: 
maximum operating regionmeasurementwaveformSiGepower amplifierHBT
 Summary | Full Text:PDF

HFET and HBT Modelling for Circuit Analysis
Iltcho ANGELOV 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1968-1976
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
FETHBTmodels
 Summary | Full Text:PDF

Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure
Naohiro TSURUMI Motonori ISHII Masaaki NISHIJIMA Manabu YANAGIHARA Tsuyoshi TANAKA Daisuke UEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2004-2009
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
HBTInGaPGaAsledgecapacitorbase resistancerecombination
 Summary | Full Text:PDF

Analytical Expressions for Maximum Operating Frequencies of Emitter-Coupled Logic and Source-Coupled FET Logic Toggle Flip-Flops
Eiichi SANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/09/01
Vol. E86-C  No. 9 ; pp. 1879-1885
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
bipolar transistorHBTHEMTdigital circuitpropagation delayflip-flop
 Summary | Full Text:PDF

Direct Measurement of the Maximum Operating Region in AlGaAs HBTs for RF Power Amplifiers
Akira INOUE Shigenori NAKATSUKA Satoshi SUZUKI Kazuya YAMAMOTO Teruyuki SHIMURA Ryo HATTORI Yasuo MITSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/08/01
Vol. E86-C  No. 8 ; pp. 1451-1457
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: 
Keyword: 
maximum operating regionmeasurementwaveformpower amplifierHBT
 Summary | Full Text:PDF

Direct Optical Injection Locking of a 100-GHz-Class Oscillator IC Using a Back-Illuminated InP/InGaAs HPT and Its Applications
Hideki KAMITSUNA Tsugumichi SHIBATA Kenji KURISHIMA Minoru IDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/07/01
Vol. E86-C  No. 7 ; pp. 1290-1298
Type of Manuscript:  INVITED PAPER (Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)
Category: MWP Devices
Keyword: 
HPTHBToptically injection-locked oscillatormicrowave photonicsmillimeter waveoptical fiber communication
 Summary | Full Text:PDF

HBT Collector Characterization by the Spectral Photocurrent Technique
Fritz SCHUERMEYER Peter J. ZAMPARDI Sharon FITZSIMMONS Roger E. WELSER Noren PAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1383-1388
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
photoluminescenceHBTGaAsAlGaAsInGaP
 Summary | Full Text:PDF

Reliability of InGaP and AlGaAs HBT
Noren PAN Roger E. WELSER Kevin S. STEVENS Charles R. LUTZ 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1366-1372
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
HBTMOCVDreliabilitymicrowave devices
 Summary | Full Text:PDF

InP DHBT with 0.5 µ m Wide Emitter along <010> Direction toward BM-HBT with Narrow Emitter
Toshiki ARAI Shigeharu YAMAGAMI Yoshifumi OKUDA Yoshimichi HARADA Yasuyuki MIYAMOTO Kazuhito FURUYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1394-1398
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
InPHBTnarrow emitter
 Summary | Full Text:PDF

MMIC Power Amplifier Applications of Heterojunction Bipolar Transistors (HBTs)
Pei-Der TSENG Liyang ZHANG Mau-Chung Frank CHANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1408-1413
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: SiGe HBTs & FETs
Keyword: 
SiGeGaAsHBTpower amplifierMMIC
 Summary | Full Text:PDF

Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile
Christoph JUNGEMANN Stefan KEITH Bernd MEINERZHAGEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1228-1234
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Device Modeling and Simulation
Keyword: 
silicon-germaniumfull-band Monte CarloHBT
 Summary | Full Text:PDF

High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors
Eiichi SANO Kenji KURISHIMA Hiroki NAKAJIMA Shoji YAMAHATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11 ; pp. 2000-2006
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
InPHBTamplifierflip-flopPLL
 Summary | Full Text:PDF

Reliability of AlGaAs and InGaP Heterojunction Bipolar Transistors
Noren PAN Roger E. WELSER Charles R. LUTZ James ELLIOT Jesse P. RODRIGUES 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11 ; pp. 1886-1894
Type of Manuscript:  INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
HBTInGaP/GaAs HBTsAlGaAs/GaAs HBTsMOCVDreliabilitymicrowave devices
 Summary | Full Text:PDF

Noise Modelling in Linear and Nonlinear Devices
Alain CAPPY Francois DANNEVILLE Gilles DAMBRINE Beaudouin TAMEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 900-907
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
noiseHEMTHBTamplifiermixer
 Summary | Full Text:PDF

High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs
Hiroshi MASUDA Kiyoshi OUCHI Akihisa TERANO Hideyuki SUZUKI Koichi WATANABE Tohru OKA Hirokazu MATSUBARA Tomonori TANOUE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 419-427
Type of Manuscript:  INVITED PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: 
Keyword: 
InP/InGaAsHBTT-shaped emitter electrodegas-source MBEPt-based metalInP subcollectorthermal runawaystatic 1/2 frequency divider
 Summary | Full Text:PDF

Development of K-Band Front-End Devices for Broadband Wireless Communication Systems Using Millimeter-Wave Flip-Chip IC Technology
Kazuaki TAKAHASHI Suguru FUJITA Hiroyuki YABUKI Takayuki YOSHIDA Yoshito IKEDA Hiroyuki SAKAI Morikazu SAGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6 ; pp. 827-833
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Functional Modules and the Design Technology
Keyword: 
flip-chipmicro bump bondingmillimeter-waveHFETHBT
 Summary | Full Text:PDF

High Speed Monolithically Integrated p-i-n/HBT Photoreceivers
Kao-Chih SYAO Augusto L. Gutierrez-AITKEN Kyounghoon YANG Xiangkun ZHANG George I. HADDAD Pallab K. BHATTACHARYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/05/25
Vol. E80-C  No. 5 ; pp. 695-702
Type of Manuscript:  Special Section PAPER (Special Issue on Photonic Integrated Circuits)
Category: Optoelectronic Integrated Receivers
Keyword: 
photoreceiverarraycrosstalksensitivityHBT
 Summary | Full Text:PDF

Track/Hold Circuit in GaAs HBT Process
Tsutomu TOBARI Haruo KOBAYASHI Kenji UCHIDA Hiroyuki MATSUURA Mineo YAMANAKA Shinji KOBAYASHI Tadashige FUJITA Akira MIURA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1997/03/25
Vol. E80-A  No. 3 ; pp. 454-460
Type of Manuscript:  Special Section PAPER (Special Section of Selected Papers from the 9th Karuizawa Workshop on Circuits and Systems)
Category: 
Keyword: 
track-holdsample-holdanalog-to-digital converterHBTGaAs
 Summary | Full Text:PDF

Aluminum-Graded-Base PNp AlGaAs/GaAs Heterojunction Transistor with 37 GHz Cut-Off Frequency
Atsushi KAMEYAMA Alan MASSENGALE Changhong DAI James S. HARRIS, Jr. 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4 ; pp. 518-523
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
HBTPnpAlGaAs/GaAscomplementary circuitgraded base
 Summary | Full Text:PDF

Device Figure-of-Merits for High-Speed Digital ICs and Baseband Amplifiers
Eiichi SANO Yutaka MATSUOKA Tadao ISHIBASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1182-1188
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
high-speed ICamplifierflip-flopHBTMESFEToptical communication
 Summary | Full Text:PDF

Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
Kenji KURISHIMA Hiroki NAKAJIMA Shoji YAMAHATA Takashi KOBAYASHI Yutaka MATSUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1171-1181
Type of Manuscript:  INVITED PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
HBTMOVPEZn diffusionabrupt emittergraded basehot electron injectionnonequilibrium transportcurrent blocking effectlateral down-scalingemitter size effect
 Summary | Full Text:PDF

High Fmax AlGaAs/GaAs HBTs with Pt/Ti/Pt/Au Base Contacts for DC to 40 GHz Broadband Amplifiers
Tohru SUGIYAMA Yasuhiko KURIYAMA Norio IIZUKA Kunio TSUDA Kouhei MORIZUKA Masao OBARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/08/25
Vol. E78-C  No. 8 ; pp. 944-948
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
semiconductor materials and devicesHBTamplifierbase metal
 Summary | Full Text:PDF

Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
Hiroki NAKAJIMA Kenji KURISHIMA Shoji YAMAHATA Takashi KOBAYASHI Yutaka MATSUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/02/25
Vol. E78-C  No. 2 ; pp. 186-192
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
InPInGaAsHBThigh-speedlow-power
 Summary | Full Text:PDF

AlGaAs/GaAs Heterojunction Bipolar Transistor ICs for Optical Transmission Systems
Nobuo NAGANO Tetsuyuki SUZAKI Masaaki SODA Kensuke KASAHARA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/06/25
Vol. E76-C  No. 6 ; pp. 883-890
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions)
Category: 
Keyword: 
electronic circuitsoptical transmissionHBTgallium arsenideuniformities
 Summary | Full Text:PDF

A Precise Method for Determining AlGaAs/GaAs HBT Large-Signal Circuit Parameters Using Bias-Dependent Noise Parameters and Small-Signal S-Parameters
Jun-ichi SHIMIZU Nobuyuki HAYAMA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/01/25
Vol. E76-C  No. 1 ; pp. 159-162
Type of Manuscript:  LETTER
Category: Electronic Circuits
Keyword: 
HBTlarge-signalS-parameternoise parameterssmall-signal
 Summary | Full Text:PDF

A 1-K ECL Gate Array Implemented with Fully Self-Aligned AlGaAs/GaAs Heterojunction Bipolar Transistors
Nobuyuki HAYAMA Yuzuru TOMONOH Hideki TAKAHASHI Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10 ; pp. 1121-1126
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
HBTgate arrayring oscillatorpropagation delay time
 Summary | Full Text:PDF

A 34.8 GHz 1/4 Static Frequency Divider Using AlGaAs/GaAs HBTs
Yoshiki YAMAUCHI Osaake NAKAJIMA Koichi NAGATA Hiroshi ITO Tadao ISHIBASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10 ; pp. 1105-1109
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
HBTGaAsICAlGaAs/GaAsfrequency divider
 Summary | Full Text:PDF

Large-Signal Parameter Modeling for AlGaAs/GaAs HBT and Its Application to a Monolithic 22 GHz-Band Oscillator
Nobuyuki HAYAMA Jun-ichi SHIMIZU Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/06/25
Vol. E75-C  No. 6 ; pp. 683-688
Type of Manuscript:  Special Section PAPER (Special Issue on MMIC Technology)
Category: 
Keyword: 
HBToscillator1/f noisephase noise
 Summary | Full Text:PDF