Keyword : Ge-on-Si photodetector


Effect of Post-Growth Annealing on Morphology of Ge Mesa Selectively Grown on Si
Sungbong PARK Yasuhiko ISHIKAWA Tai TSUCHIZAWA Toshifumi WATANABE Koji YAMADA Sei-ichi ITABASHI Kazumi WADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/02/01
Vol. E91-C  No. 2 ; pp. 181-186
Type of Manuscript:  Special Section PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
Category: 
Keyword: 
Ge-on-Si photodetectorselective epitaxial growthUHV-CVDpost-growth annealingmorphological instability
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