Keyword : Ge-channel


Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
Kuniaki HASHIMOTO Akio OHTA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 674-679
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Ge-channelhigh-k dielectricsinterfacial control layerX-ray photoelectron spectroscopyenergy band alignment
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