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An AM-PM Compensation of Cross-Coupled Capacitance Neutralization Technique in a Differential Power Amplifier
Takuma TORII Masaomi TSURU | Publication:
Publication Date: 2022/10/01
Vol. E105-C
No. 10 ;
pp. 492-500
Type of Manuscript:
Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category:
Keyword:
power amplifiers, GaN, phase compensation, K-band, | | | Summary | Full Text:PDF | |
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High Power GaN-HEMT for Wireless Base Station Applications
Toshihide KIKKAWA Kazukiyo JOSHIN | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C
No. 5 ;
pp. 608-615
Type of Manuscript:
Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword:
GaN, HEMT, base station, amplifier, W-CDMA, | | | Summary | Full Text:PDF | |
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Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiNx Film
Tamotsu HASHIZUME Ryuusuke NAKASAKI Shin-ya OOTOMO Susumu OYAMA Hideki HASEGAWA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C
No. 10 ;
pp. 1455-1461
Type of Manuscript:
Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword:
GaN, passivation, surface, SiNx, ECR, | | | Summary | Full Text:PDF | |
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GaN-Based Gunn Diodes: Their Frequency and Power Performance and Experimental Considerations
Egor ALEKSEEV Dimitris PAVLIDIS William Earl SUTTON Edwin PINER Joan REDWING | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C
No. 10 ;
pp. 1462-1469
Type of Manuscript:
Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword:
GaN, THz, Gunn, NDR, | | | Summary | Full Text:PDF | |
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One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000 on GaAs (111) Substrates
Fumio HASEGAWA Masato MINAMI Takashi SUEMASU | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C
No. 4 ;
pp. 633-638
Type of Manuscript:
INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category:
Keyword:
GaN, HVPE, GaAs substrate, thick GaN layer, | | | Summary | Full Text:PDF | |
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ECR-MBE Growth of GaN Using Hydrogen-Nitrogen Mixed Gas Plasma
Yasuo CHIBA Tsutomu ARAKI Yasushi NANISHI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C
No. 4 ;
pp. 627-632
Type of Manuscript:
Special Section PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category:
Keyword:
GaN, hydrogen, TEM, columnar structure, | | | Summary | Full Text:PDF | |
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Optoelectronic Activities of Dislocations in Gallium Nitride Crystals
Yutaka MERA Koji MAEDA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C
No. 4 ;
pp. 612-619
Type of Manuscript:
INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category:
Keyword:
dislocation, GaN, optelectronic, | | | Summary | Full Text:PDF | |
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