Keyword : GaN


120-W Ku-Band GaN SSPA with Diode Linearizer for Future Broadcasting Satellites
Masafumi NAGASAKA Masaaki KOJIMA Takuma TORII Hiromitsu UTSUMI Koji YAMANAKA Shintaro SHINJO Mitsuhiro SHIMOZAWA Hisashi SUJIKAI 
Publication:   
Publication Date: 2019/10/01
Vol. E102-C  No. 10 ; pp. 717-724
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
broadcasting satelliteSSPAKu-bandGaN
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Design of a Wideband Constant-on-Time Control Envelope Amplifier for Wireless Basestation Envelope Tracking Power Amplifiers
Deng-Fong LU Chin HSIA 
Publication:   
Publication Date: 2019/10/01
Vol. E102-C  No. 10 ; pp. 707-716
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
envelope trackinglinear amplifierswitching buck converterGaNwireless communications
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An Efficient Plasma Lighting System with a 300W GaN Power Amplifier Using Band-Limited Pulsed RF Signal
Wonshil KANG Hyunchul KU 
Publication:   
Publication Date: 2017/10/01
Vol. E100-C  No. 10 ; pp. 934-937
Type of Manuscript:  BRIEF PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
plasma lighting systempulsed RFGaNpower amplifier
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GaN-Based Light-Emitting Diodes with Graphene Buffers for Their Application to Large-Area Flexible Devices
Jitsuo OHTA Jeong Woo SHON Kohei UENO Atsushi KOBAYASHI Hiroshi FUJIOKA 
Publication:   
Publication Date: 2017/02/01
Vol. E100-C  No. 2 ; pp. 161-165
Type of Manuscript:  INVITED PAPER (Special Section on Fabrication Technologies Supporting the Photonic/Nanostructure Devices)
Category: 
Keyword: 
GaNgrapheneglasspulsed sputtering deposition
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Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence
Hiroshi OKADA Yuki OKADA Hiroto SEKIGUCHI Akihiro WAKAHARA Shin-ichiro SATO Takeshi OHSHIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5 ; pp. 409-412
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
GaNproton irradiation effectsLED
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Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
Naoteru SHIGEKAWA Suehiro SUGITANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1212-1217
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
GaNHEMTthreshold voltagepiezoelectric effectsfilm stress
 Summary | Full Text:PDF

On the Large Signal Evaluation and Modeling of GaN FET
Iltcho ANGELOV Mattias THORSELL Kristoffer ANDERSSON Akira INOUE Koji YAMANAKA Hifumi NOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1225-1233
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
GaNFETsmall signal and large signal models
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Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures
Hironari CHIKAOKA Yoichi TAKAKUWA Kenji SHIOJIMA Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5 ; pp. 691-695
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
GaNHEMTpotential barriercontact resistancetunneling current density
 Summary | Full Text:PDF

High-Power Pure Blue InGaN Laser Diodes
Atsuo MICHIUE Takashi MIYOSHI Tokuya KOZAKI Tomoya YANAMOTO Shin-ichi NAGAHAMA Takashi MUKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/02/01
Vol. E92-C  No. 2 ; pp. 194-197
Type of Manuscript:  INVITED PAPER (Special Section on Recent Advances in Integrated Photonic Devices)
Category: 
Keyword: 
InGaNGaNhigh-power laserblue LD
 Summary | Full Text:PDF

Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide
Shun SUGIURA Shigeru KISHIMOTO Takashi MIZUTANI Masayuki KURODA Tetsuzo UEDA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1001-1003
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
enhancementGaNMOSFETsHfO2
 Summary | Full Text:PDF

Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
Masataka HIGASHIWAKI Takashi MIMURA Toshiaki MATSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 984-988
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: 
Keyword: 
GaNheterostructure field-effect transistors (HFETs)millimeter-wave
 Summary | Full Text:PDF

Hot-Electron Transport and Noise in GaN Two-Dimensional Channels for HEMTs
Arvydas MATULIONIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 913-920
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: 
Keyword: 
GaNAlGaNhigh-electron-mobility transistor (HEMT)two-dimensional electron gas (2DEG)microwave frequency
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A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET
Daigo KIKUTA Jin-Ping AO Junya MATSUDA Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1031-1036
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
HFETGaNAlGaNMISinsulatorenhancement
 Summary | Full Text:PDF

Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications
Oktay YILMAZOGLU Kabula MUTAMBA Dimitris PAVLIDIS Marie Rose MBARGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1037-1041
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
GaNpressure sensorHEMTSchottky diode
 Summary | Full Text:PDF

Improvement of CO Sensitivity in GaN-Based Gas Sensors
Eunjung CHO Dimitris PAVLIDIS Guangyuan ZHAO Seth M. HUBBARD Johannes SCHWANK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1047-1051
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
GaNgas sensorPt Schottky diodeCO
 Summary | Full Text:PDF

High Power GaN-HEMT for Wireless Base Station Applications
Toshihide KIKKAWA Kazukiyo JOSHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5 ; pp. 608-615
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
GaNHEMTbase stationamplifierW-CDMA
 Summary | Full Text:PDF

Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure
Seikoh YOSHIDA Nariaki IKEDA Jiang LI Takahiro WADA Hironari TAKEHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 690-693
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Power Devices
Keyword: 
GaNAlGaNSchottkySBDon-voltage
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Simulation of Ultrafast GaN/AlN Intersubband Optical Switches
Nobuo SUZUKI Norio IIZUKA Kei KANEKO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/03/01
Vol. E88-C  No. 3 ; pp. 342-348
Type of Manuscript:  Special Section PAPER (Special Section on Optical Signal-Processing Devices for Photonic Networks)
Category: 
Keyword: 
OTDMoptical switchintersubband transitionGaNFDTD
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Simulation of Simultaneous Multi-Wavelength Conversion in GaN/AlN Intersubband Optical Amplifiers
Nobuo SUZUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/07/01
Vol. E87-C  No. 7 ; pp. 1155-1160
Type of Manuscript:  Special Section PAPER (Special Section on Ultrafast Photonics)
Category: 
Keyword: 
WDMwavelength converterintersubband transitionoptical amplifierGaNFDTD
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High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire
Ilesanmi ADESIDA Vipan KUMAR Jinwei YANG Muhammed Asif KHAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1955-1959
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
GaNHEMTssapphire
 Summary | Full Text:PDF

Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al2O3 Insulated Gate
Shinya OOTOMO Hideki HASEGAWA Tamotsu HASHIZUME 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2043-2050
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
GaNAlGaNleakage currentsurface statespassivation
 Summary | Full Text:PDF

Improvements of Crystal Orientations of Wurtzite-Type GaN Thin Films Grown on Metal Surfaces
Yuichi SATO Toshifumi HISHINUMA Susumu SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/06/01
Vol. E86-C  No. 6 ; pp. 1002-1006
Type of Manuscript:  Special Section PAPER (Special Issue on Recent Development of Electro-Mechanical Devices (IS-EMD 2002))
Category: Emerging Technologies
Keyword: 
wurtzite structureGaNmetal-foilintermediate layerSiO2
 Summary | Full Text:PDF

Progress in Self-Assembled Quantum Dots for Optoelectronic Device Application
Yasuhiko ARAKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/01/01
Vol. E85-C  No. 1 ; pp. 37-44
Type of Manuscript:  INVITED PAPER (Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
Category: 
Keyword: 
quantum dotssemiconductor laserquantum dot lasersMOCVDnano structuresnano technologiesGaN
 Summary | Full Text:PDF

GaN-Based Gunn Diodes: Their Frequency and Power Performance and Experimental Considerations
Egor ALEKSEEV Dimitris PAVLIDIS William Earl SUTTON Edwin PINER Joan REDWING 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1462-1469
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword: 
GaNTHzGunnNDR
 Summary | Full Text:PDF

Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiNx Film
Tamotsu HASHIZUME Ryuusuke NAKASAKI Shin-ya OOTOMO Susumu OYAMA Hideki HASEGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1455-1461
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword: 
GaNpassivationsurfaceSiNxECR
 Summary | Full Text:PDF

Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
Kenji SHIOJIMA Naoteru SHIGEKAWA Tetsuya SUEMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/12/25
Vol. E83-C  No. 12 ; pp. 1968-1970
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
GaNHEMTburied p-layercarrier confinement
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One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000 on GaAs (111) Substrates
Fumio HASEGAWA Masato MINAMI  Takashi SUEMASU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C  No. 4 ; pp. 633-638
Type of Manuscript:  INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
GaNHVPEGaAs substratethick GaN layer
 Summary | Full Text:PDF

ECR-MBE Growth of GaN Using Hydrogen-Nitrogen Mixed Gas Plasma
Yasuo CHIBA Tsutomu ARAKI Yasushi NANISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C  No. 4 ; pp. 627-632
Type of Manuscript:  Special Section PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
GaNhydrogenTEMcolumnar structure
 Summary | Full Text:PDF

Developments of GaN Bulk Substrates for GaN Based LEDs and LDs
Osamu ODA Takayuki INOUE Yoji SEKI Akihiro WAKAHARA Akira YOSHIDA Satoshi KURAI Yoichi YAMADA Tsunemasa TAGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C  No. 4 ; pp. 639-646
Type of Manuscript:  Special Section PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
GaNHVPEepitaxial growthsolution growth
 Summary | Full Text:PDF

Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors
Hiroyasu ISHIKAWA Naoyuki NAKADA Masaharu NAKAJI Guang-Yuan ZHAO Takashi EGAWA Takashi JIMBO Masayoshi UMENO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C  No. 4 ; pp. 591-597
Type of Manuscript:  Special Section PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
light emitting diode (LED)distributed Bragg reflector (DBR)GaNAlGaNGaInN
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Distributed Feedback Laser Diodes Employing Embedded Dielectric Gratings Located above the Active Region
Amber C. ABARE Steven P. DENBAARS Larry A. COLDREN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C  No. 4 ; pp. 560-563
Type of Manuscript:  INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
distributed feedback laser diodesdielectric gratingsInGaNGaN
 Summary | Full Text:PDF

Continuous Wave Operation of InGaN Laser Diodes Fabricated on SiC Substrates
Akito KURAMATA Shin-ichi KUBOTA Reiko SOEJIMA Kay DOMEN Kazuhiko HORINO Peter HACKE Toshiyuki TANAHASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C  No. 4 ; pp. 546-551
Type of Manuscript:  INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
GaNInGaNlaser diodesSiC substratescontinuous wave operation
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Optoelectronic Activities of Dislocations in Gallium Nitride Crystals
Yutaka MERA Koji MAEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C  No. 4 ; pp. 612-619
Type of Manuscript:  INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
dislocationGaNoptelectronic
 Summary | Full Text:PDF

GaN-Based FETs for Microwave Power Amplification
Yi-Feng WU Bernd P. KELLER Stacia KELLER Jane J. XU Brian J. THIBEAULT Steven P. DENBAARS Umesh K. MISHRA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11 ; pp. 1895-1905
Type of Manuscript:  INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
GaNFETHEMTpower deviceamplifiermicrowave
 Summary | Full Text:PDF