Keyword : GaN HEMT

High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications
Andrei GREBENNIKOV James WONG Hiroaki DEGUCHI 
Publication:   
Publication Date: 2021/10/01
Vol. E104-C  No. 10 ; pp. 488-495
Type of Manuscript:  INVITED PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
Doherty amplifier, asymmetric, inverted, broadband, GaN HEMT, efficiency, 
 Summary | Full Text:PDF(1.3MB)
Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer
Yasuyuki MIYAMOTO Takahiro GOTOW 
Publication:   
Publication Date: 2020/06/01
Vol. E103-C  No. 6 ; pp. 304-307
Type of Manuscript:  BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword: 
GaN HEMT, simulation, short channel effect, thin channel, 
 Summary | Full Text:PDF(839.9KB)
Broadband RF Power Amplifier with Combination of Large Signal X-Parameter and Real Frequency Techniques
Ragavan KRISHNAMOORTHY Narendra KUMAR Andrei GREBENNIKOV Binboga Siddik YARMAN Harikrishnan RAMIAH 
Publication:   
Publication Date: 2020/05/01
Vol. E103-C  No. 5 ; pp. 225-230
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
RF power amplifier, X-parameter, RFT, GaN HEMT, efficiency, 
 Summary | Full Text:PDF(1.2MB)
4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching
Kazuki MASHIMO Ryo ISHIKAWA Kazuhiko HONJO 
Publication:   
Publication Date: 2018/10/01
Vol. E101-C  No. 10 ; pp. 751-758
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
power amplifier, high efficiency, band selective, GaN HEMT, PIN diode, 
 Summary | Full Text:PDF(2.2MB)
Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers
Masaru SATO Yoshitaka NIIDA Toshihide SUZUKI Yasuhiro NAKASHA Yoichi KAWANO Taisuke IWAI Naoki HARA Kazukiyo JOSHIN 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5 ; pp. 417-423
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
common gate amplifier, GaN HEMT, InP HEMT, low noise amplifier, 
 Summary | Full Text:PDF(3.8MB)
A 7.1 GHz 170 W Solid-State Power Amplifier with 20-Way Combiner for Space Applications
Naoki HASEGAWA Naoki SHINOHARA Shigeo KAWASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/10/01
Vol. E99-C  No. 10 ; pp. 1140-1146
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
solid-state power amplifier, GaN HEMT, radial combiner and divider, CW-drive, 
 Summary | Full Text:PDF(1.5MB)
Experimental Investigation on RF Characteristics of Cryogenically-Cooled 3W-Class Receiver Amplifier Employing GaN HEMT with Blue Light LED for Mobile Base Stations
Yasunori SUZUKI Shoichi NARAHASHI Toshio NOJIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/10/01
Vol. E97-C  No. 10 ; pp. 930-937
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-wave Technologies)
Category: 
Keyword: 
cryogenically-cooled amplifier, GaN HEMT, blue light, DC, RF, light-emitting diode, mobile base station, receiver amplifier, 
 Summary | Full Text:PDF(1.7MB)
Millimeter-Wave GaN HEMT for Power Amplifier Applications
Kazukiyo JOSHIN Kozo MAKIYAMA Shiro OZAKI Toshihiro OHKI Naoya OKAMOTO Yoshitaka NIIDA Masaru SATO Satoshi MASUDA Keiji WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/10/01
Vol. E97-C  No. 10 ; pp. 923-929
Type of Manuscript:  INVITED PAPER (Special Section on Recent Progress in Microwave and Millimeter-wave Technologies)
Category: 
Keyword: 
GaN HEMT, Millimeter-wave, Power amplifier, Device modeling, 
 Summary | Full Text:PDF(2.1MB)
A Design of X-Band 40 W Pulse-Driven GaN HEMT Power Amplifier
Hae-Chang JEONG Kyung-Whan YEOM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/06/01
Vol. E96-C  No. 6 ; pp. 923-934
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
GaN HEMT, power amplifier module, load-pull measurement, pre-match, fixture de-embedding, 
 Summary | Full Text:PDF(2.5MB)
High-Power GaN HEMT T/R Switch Using Asymmetric Series-Shunt/Shunt Configuration
Masatake HANGAI Yukinobu TARUI Yoshitaka KAMO Morishige HIEDA Masatoshi NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/10/01
Vol. E94-C  No. 10 ; pp. 1533-1538
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: Active Devices and Circuits
Keyword: 
T/R switch, GaN HEMT, high-power, series-shunt/shunt configuration, 
 Summary | Full Text:PDF(953.3KB)
A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier
Akihiro ANDO Yoichiro TAKAYAMA Tsuyoshi YOSHIDA Ryo ISHIKAWA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/07/01
Vol. E94-C  No. 7 ; pp. 1193-1198
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
class-F power amplifier, GaN HEMT, diode linearizer, intermodulation distortion, diode bias control, 
 Summary | Full Text:PDF(1.7MB)