Publication: Publication Date: 2021/10/01 Vol. E104-CNo. 10 ;
pp. 488-495 Type of Manuscript: INVITED PAPER (Special Section on Microwave and Millimeter-Wave Technologies) Category: Keyword: Doherty amplifier, asymmetric, inverted, broadband, GaN HEMT, efficiency,
Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer Yasuyuki MIYAMOTOTakahiro GOTOW
Publication: Publication Date: 2020/06/01 Vol. E103-CNo. 6 ;
pp. 304-307 Type of Manuscript: BRIEF PAPER Category: Semiconductor Materials and Devices Keyword: GaN HEMT, simulation, short channel effect, thin channel,
Publication: Publication Date: 2020/05/01 Vol. E103-CNo. 5 ;
pp. 225-230 Type of Manuscript: PAPER Category: Microwaves, Millimeter-Waves Keyword: RF power amplifier, X-parameter, RFT, GaN HEMT, efficiency,
Publication: Publication Date: 2018/10/01 Vol. E101-CNo. 10 ;
pp. 751-758 Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technologies) Category: Keyword: power amplifier, high efficiency, band selective, GaN HEMT, PIN diode,
Publication: Publication Date: 2017/05/01 Vol. E100-CNo. 5 ;
pp. 417-423 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: common gate amplifier, GaN HEMT, InP HEMT, low noise amplifier,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/10/01 Vol. E99-CNo. 10 ;
pp. 1140-1146 Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology) Category: Keyword: solid-state power amplifier, GaN HEMT, radial combiner and divider, CW-drive,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2014/10/01 Vol. E97-CNo. 10 ;
pp. 923-929 Type of Manuscript: INVITED PAPER (Special Section on Recent Progress in Microwave and Millimeter-wave Technologies) Category: Keyword: GaN HEMT, Millimeter-wave, Power amplifier, Device modeling,
Experimental Investigation on RF Characteristics of Cryogenically-Cooled 3W-Class Receiver Amplifier Employing GaN HEMT with Blue Light LED for Mobile Base Stations Yasunori SUZUKIShoichi NARAHASHIToshio NOJIMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/10/01 Vol. E94-CNo. 10 ;
pp. 1533-1538 Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology) Category: Active Devices and Circuits Keyword: T/R switch, GaN HEMT, high-power, series-shunt/shunt configuration,