Keyword : GaInNAs


Temperature Characteristics of λ=1.3 µm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy
Takeo KAGEYAMA Tomoyuki MIYAMOTO Shigeki MAKINO Yoshihiko IKENAGA Fumio KOYAMA Kenichi IGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/01/01
Vol. E85-C  No. 1 ; pp. 71-78
Type of Manuscript:  Special Section PAPER (Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
Category: 
Keyword: 
lasertemperatureVCSELGaInNAs
 Summary | Full Text:PDF(757KB)

Low Vbe GaInAsN Base Heterojunction Bipolar Transistors
Roger E. WELSER Paul M. DELUCA Alexander C. WANG Noren PAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1389-1393
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
InGaP/GaAs HBTAlGaAs/GaAs HBTGaInNAsbipolar transistorturn-on voltage
 Summary | Full Text:PDF(287.4KB)

Recent Progress in GaInNAs Laser
Takeshi KITATANI Masahiko KONDOW Kouji NAKAHARA Toshiaki TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/06/25
Vol. E83-C  No. 6 ; pp. 830-837
Type of Manuscript:  INVITED PAPER (Special Issue on Advanced Optical Devices for Next Generation High-Speed Communication Systems and Photonic Networks)
Category: Semiconductor Lasers
Keyword: 
GaInNAsoptical-fiber communicationshigh-temperature performancecharacteristic temperate
 Summary | Full Text:PDF(1.5MB)