Keyword : GaInAsP/InP

Vertical Cavity Surface-Emitting Laser Array for 1.3 µm Range Parallel Optical Fiber Transmissions
Toshihiko BABA Yukiaki YOGO Katsumasa SUZUKI Tomonobu KONDO Fumio KOYAMA Kenichi IGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/02/25
Vol. E78-C  No. 2 ; pp. 201-203
Type of Manuscript:  LETTER
Category: Opto-Electronics
Keyword: 
surface-emitting laser, laser array, semiconductor laser, buried heterostructure, GaInAsP/InP, optical fiber communication, 
 Summary | Full Text:PDF
First Room Temperature CW Operation of GaInAsP/InP Surface Emitting Laser
Toshihiko BABA Yukiaki YOGO Katsumasa SUZUKI Fimio KOYAMA Kenichi IGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9 ; pp. 1423-1424
Type of Manuscript:  LETTER
Category: Opto-Electronics
Keyword: 
surface emitting laser, semiconductor laser, buried heterostructure, GaInAsP/InP, optical fiber communication, 
 Summary | Full Text:PDF
Static Characteristics of GaInAsP/InP Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes (GRIN-SCH QW LDs) Grown by Metalorganic Chemical Vapor Deposition (MOCVD)
Akihiko KASUKAWA Narihito MATSUMOTO Takeshi NAMEGAYA Yoshihiro IMAJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1541-1554
Type of Manuscript:  PAPER
Category: Opto-Electronics
Keyword: 
GRIN-SCH-MQW, MOCVD, GaInAsP/InP, buried heterostructure, laser diodes, 
 Summary | Full Text:PDF