Keyword : GaAs


A 250 MHz to 8 GHz GaAs pHEMT IQ Modulator
Kiyoyuki IHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/02/01
Vol. E96-C  No. 2 ; pp. 245-250
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
IQ modulatorEVMdirect conversionGaAspHEMTACPRtemperature driftdistortion
 Summary | Full Text:PDF

An Analysis of Multi-Layer Inductors for Miniaturizing of GaAs MMIC
Yo YAMAGUCHI Takana KAHO Motoharu SASAKI Kenjiro NISHIKAWA Tomohiro SEKI Tadao NAKAGAWA Kazuhiro UEHARA Kiyomichi ARAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/07/01
Vol. E93-C  No. 7 ; pp. 1119-1125
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
multi-layer inductorstacked inductorthree-dimensional MMICGaAs
 Summary | Full Text:PDF

High Moisture Resistant and Reliable Gate Structure Design in High Power pHEMTs for Millimeter-Wave Applications
Hirotaka AMASUGA Toshihiko SHIGA Masahiro TOTSUKA Seiki GOTO Akira INOUE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5 ; pp. 676-682
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
millimeter-waveGaAspHEMThumiditypower densitybreakdown voltage
 Summary | Full Text:PDF

Design and Fabrication of Planar GaAs Gunn Diodes
Mi-Ra KIM Seong-Dae LEE Yeon-Sik CHAE Jin-Koo RHEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5 ; pp. 693-698
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
GaAsGunn diodegraded-gap injectornegative resistance
 Summary | Full Text:PDF

The Temperature Dependence of a GaAs pHEMT Wideband IQ Modulator IC
Kiyoyuki IHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/03/01
Vol. E91-C  No. 3 ; pp. 366-372
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
IQ modulatortemperature dependenceEVMdirect conversionGaAspHEMT
 Summary | Full Text:PDF

Annealing Induced Diffusion Dynamics in As Ion-Implanted GaAs
Hiroyuki SHINOJIMA Ryuzi YANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/01/01
Vol. E90-C  No. 1 ; pp. 46-50
Type of Manuscript:  Special Section PAPER (Special Section on Microoptomechatronics)
Category: Micro/Nano Fabrication
Keyword: 
As ion implantationGaAsdefectannealingVGa vacancy assisted diffusionpseudoactivation energy
 Summary | Full Text:PDF

Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation
Kazuhiro MOCHIZUKI Ken-ichi TANAKA Takashi SHIOTA Takafumi TANIGUCHI Hiroyuki UCHIYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 943-948
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: High-Speed HBTs and ICs
Keyword: 
heterojunction bipolar transistorreliabilityrapid thermal annealingGaAsInGaP
 Summary | Full Text:PDF

Noise Analysis of GaAs-MESFETs by Physics-Based Circuit Simulator Employing Monte Carlo Technique
Masahiro NAKAYAMA Shinichi NARITA Hiroki I. FUJISHIRO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/07/01
Vol. E88-C  No. 7 ; pp. 1509-1515
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
Monte CarloGaAsMESFETnoise figurenoise generationelectron velocity
 Summary | Full Text:PDF

Highly Stable 6-18 GHz 2.3 dB Low-Noise Amplifier with Resistive-Loaded Series Feedback Circuits
Hidenori YUKAWA Yukinobu TARUI Koh KANAYA Hiromitsu UCHIDA Masatoshi NAKAYAMA Yasushi ITOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/12/01
Vol. E86-C  No. 12 ; pp. 2445-2451
Type of Manuscript:  Special Section PAPER (Special Issue on Recent Trends on Microwave and Millimeter Wave Application Technology)
Category: Amplifier
Keyword: 
microwaveamplifierwidebandlow-noiseGaAs
 Summary | Full Text:PDF

Characteristics of GaAs HEMTs with Flip-Chip Interconnections
Naoko ONO Fumio SASAKI Kazuhiro ARAI Hiroyuki YOSHINAGA Yuji ISEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/12/01
Vol. E86-C  No. 12 ; pp. 2452-2461
Type of Manuscript:  Special Section PAPER (Special Issue on Recent Trends on Microwave and Millimeter Wave Application Technology)
Category: Amplifier
Keyword: 
GaAsHEMTflip-chip interconnectioncurrent pathinverted microstrip line
 Summary | Full Text:PDF

Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure
Naohiro TSURUMI Motonori ISHII Masaaki NISHIJIMA Manabu YANAGIHARA Tsuyoshi TANAKA Daisuke UEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2004-2009
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
HBTInGaPGaAsledgecapacitorbase resistancerecombination
 Summary | Full Text:PDF

A 4-12 GHz 2 W GaAs HFET Amplifier Using Pre-Matching Circuits for Dual Gate-Bias Feed and Tapered Power Splitting/Combining FETs
Hidenori YUKAWA Masatoshi NII Yoshihiro TSUKAHARA Yukio IKEDA Yasushi ITOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12 ; pp. 2029-2035
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
Category: 
Keyword: 
microwaveamplifierwidebandhigh powerGaAs
 Summary | Full Text:PDF

Dynamic Gate Voltage Characteristic of the Super Self-Aligned Shunt GaAs FET
Satoshi MAKIOKA Yoshiharu ANDA Daisuke UEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12 ; pp. 2036-2040
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
Category: 
Keyword: 
switch ICGaAsmulti-gateEO probe
 Summary | Full Text:PDF

Designs of Building Blocks for High-Speed, Low-Power Processors
Tadayoshi ENOMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/02/01
Vol. E85-C  No. 2 ; pp. 331-338
Type of Manuscript:  Special Section PAPER (Special Issue on High-Performance and Low-Power Microprocessors)
Category: High-Performance Technologies
Keyword: 
register filecache SRAMGaAspower dissipation
 Summary | Full Text:PDF

Hydrogen Degradation of InP HEMTs and GaAs PHEMTs
Jesus A. del ALAMO Roxann R. BLANCHARD Samuel D. MERTENS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1289-1293
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
high-electron mobility transistorhydrogenreliabilityInPGaAs
 Summary | Full Text:PDF

MMIC Power Amplifier Applications of Heterojunction Bipolar Transistors (HBTs)
Pei-Der TSENG Liyang ZHANG Mau-Chung Frank CHANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1408-1413
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: SiGe HBTs & FETs
Keyword: 
SiGeGaAsHBTpower amplifierMMIC
 Summary | Full Text:PDF

HBT Collector Characterization by the Spectral Photocurrent Technique
Fritz SCHUERMEYER Peter J. ZAMPARDI Sharon FITZSIMMONS Roger E. WELSER Noren PAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1383-1388
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
photoluminescenceHBTGaAsAlGaAsInGaP
 Summary | Full Text:PDF

0.15-µm T-Shaped Gate MODFETs Using BCB as Low-k Spacer
Yoshiharu ANDA Katsuhiko KAWASHIMA Mitsuru NISHITSUJI Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1323-1327
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
GaAsMODFETBCBmillimeter wavelow-k
 Summary | Full Text:PDF

Low-Voltage, Low-Power, High-Speed 0.25-µm GaAs HEMT Delay Flip-Flops
Tadayoshi ENOMOTO Atsunori HIROBE Masahiro FUJII Nobuhide YOSHIDA Shuji ASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/11/25
Vol. E83-C  No. 11 ; pp. 1776-1787
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
GaAsHEMTdelay latchdelay flip-floppower dissipation
 Summary | Full Text:PDF

High Performance HJFET MMIC with Embedded Gate Technology for Microwave and Millimeter-Wave IC's Using EB Lithography (EMMIE)
Akio WAKEJIMA Yoichi MAKINO Katsumi YAMANOGUCHI Norihiko SAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11 ; pp. 1977-1981
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
GaAsHJFETMMICmillimeter wave
 Summary | Full Text:PDF

ECL-Compatible Low-Power-Consumption 10-Gb/s GaAs 8:1 Multiplexer and 1:8 Demultiplexer
Nobuhide YOSHIDA Masahiro FUJII Takao ATSUMO Keiichi NUMATA Shuji ASAI Michihisa KOHNO Hirokazu OIKAWA Hiroaki TSUTSUI Tadashi MAEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11 ; pp. 1992-1999
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
multiplexerdemultiplexerGaAs10 Gb/sECL-compatiblelow power consumption
 Summary | Full Text:PDF

0.21-fJ GaAs DCFL Circuits Using 0.2-µm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs
Shigeki WADA Masatoshi TOKUSHIMA Masaoki ISHIKAWA Nobuhide YOSHIDA Masahiro FUJII Tadashi MAEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 491-497
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
Keyword: 
GaAsheterojunction FETY-shaped gateDCFLlow supply voltage
 Summary | Full Text:PDF

A High Power and Low Distortion Amplifier Module for Large Cell Base Station in Digital Cordless System
Morio NAKAMURA Masahiro MAEDA Shigeru MORIMOTO Hiroyuki MASATO Yukio NAKAMURA Yorito OTA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6 ; pp. 886-891
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
GaAspower modulehigh powerlow distortionpower divider/combiner
 Summary | Full Text:PDF

Miniaturized Front-End HIC Using MBB Technology for Mobile Communication Equipment
Junji ITOH Tadayoshi NAKATSUKA Takayuki YOSHIDA Mitsuru NISHITSUJI Tomoya UDA Osamu ISHIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6 ; pp. 834-840
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Functional Modules and the Design Technology
Keyword: 
mobile communicationfront-enddown-converterGaAshybrid IC
 Summary | Full Text:PDF

Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFETs and Their Application to V-Band Amplifiers
Kiyomitsu ONODERA Kazumi NISHIMURA Takumi NITTONO Yasuro YAMANE Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6 ; pp. 868-875
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
GaAsMESFETV-band amplifier
 Summary | Full Text:PDF

Low-Voltage Operation GaAs Receiver Front-End IC
Junji ITOH Tadayoshi NAKATSUKA Mitsuru NISHITSUJI Tomoya UDA Osamu ISHIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/12/25
Vol. E80-C  No. 12 ; pp. 1592-1597
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies)
Category: 
Keyword: 
mobile communicationfront-enddown-converterGaAs
 Summary | Full Text:PDF

Improved Equivalent Circuit Model of GaAs FET Switch for MMIC Phase Shifter Design
Hideki TAKASU Shigeru WATANABE Susumu KAMIHASHI Motoharu OHTOMO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6 ; pp. 812-820
Type of Manuscript:  PAPER
Category: Microwave and Millimeter Wave Technology
Keyword: 
MMICphase shifterGaAsswitch
 Summary | Full Text:PDF

Gate Current Control Method by Pull-Down FET's for 0-28 dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9 GHz PHS
Tadahiro SASAKI Shoji OTAKA Tadahiko MAEDA Toshiyuki UMEDA Kazuya NISHIHORI Atsushi KAMEYAMA Mayumi HIROSE Yoshiaki KITAURA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6 ; pp. 794-799
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
GaAsdirect-conversionattenuatormodulatorMMICMESFETpersonal handy phone system
 Summary | Full Text:PDF

A Small-Sized 10 W Module for 1.5 GHz Portable DMCA Radios Using New Power Divider/Combiner
Masahiro MAEDA Morio NAKAMURA Shigeru MORIMOTO Hiroyuki MASATO Yorito OTA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6 ; pp. 751-756
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
GaAspower modulehigh frequencypower divider/combinerFETisolationsecond-harmonic controlsmall sizehigh powerhigh efficiencylow supply voltagemobile radioDMCA
 Summary | Full Text:PDF

Track/Hold Circuit in GaAs HBT Process
Tsutomu TOBARI Haruo KOBAYASHI Kenji UCHIDA Hiroyuki MATSUURA Mineo YAMANAKA Shinji KOBAYASHI Tadashige FUJITA Akira MIURA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1997/03/25
Vol. E80-A  No. 3 ; pp. 454-460
Type of Manuscript:  Special Section PAPER (Special Section of Selected Papers from the 9th Karuizawa Workshop on Circuits and Systems)
Category: 
Keyword: 
track-holdsample-holdanalog-to-digital converterHBTGaAs
 Summary | Full Text:PDF

AFM Characterization of GaAs/AlGaAs Waveguides
Kazuhiko HOSOMI Masataka SHIRAI Kenji HIRUMA Junji SHIGETA Toshio KATSUYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11 ; pp. 1579-1585
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
GaAswaveguidescatteringsurface roughness
 Summary | Full Text:PDF

Photoluminescence Characteristics of GaAs Nanowhis-kers: Effects of Depletion Potential
Kensuke OGAWA Kenji HIRUMA Toshio KATSUYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11 ; pp. 1573-1578
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
GaAswhiskerradiative recombinationquantum confinement
 Summary | Full Text:PDF

GaAs MMIC for 2.4 GHz Wireless LAN Applications
Kazuhiko KOBAYASHI Toru MANIWA Yoshio AOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/05/25
Vol. E79-C  No. 5 ; pp. 705-708
Type of Manuscript:  Special Section LETTER (Special Issue on Microwave Devices for Mobile Communications)
Category: Active Devices
Keyword: 
GaAsMMICLANwirelessspread spectrumISM-band
 Summary | Full Text:PDF

An lmproved Gate Current Model of GaAs FET's for Nonlinear Circuit Simulation
Shigeru WATANABE Yuji ODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/05/25
Vol. E79-C  No. 5 ; pp. 606-610
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave Devices for Mobile Communications)
Category: Active Devices
Keyword: 
GaAsFETmicrowaveequivalent clrcuitmodelingsimulation
 Summary | Full Text:PDF

A Decision Circuit with Phase Detectors for 10-Gb/s Optical Communication Systems
Makoto SHIKATA Akira NISHINO Ryoji SHIGEMASA Tamotsu KIMURA Takashi USHIKUBO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4 ; pp. 496-502
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
GaAsHEMTDCFLoptical communicationdecision circuit
 Summary | Full Text:PDF

A 1.3 V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10 Gbps
Masahiro FUJII Tadashi MAEDA Yasuo OHNO Masatoshi TOKUSHIMA Masaoki ISHIKAWA Muneo FUKAISHI Hikaru HIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4 ; pp. 512-517
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
low powerhigh speedGaAsheterojunction FETSCFLlogic swinglow supply voltageD-FF
 Summary | Full Text:PDF

GaAs 10 Gb/s 64:1 Multiplexer/Demultiplexer Chip Sets
Masaaki SHIMADA Norio HIGASHISAKA Akira OHTA Kenji HOSOGI Kazuo KUBO Noriyuki TANINO Tadashi TAKAGI Fuminobu HIDANI Osamu ISHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4 ; pp. 503-511
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
multiplexerdemultiplexerGaAs10 Gb/sSCFLDCFL
 Summary | Full Text:PDF

1.4 GHz Natural Air-Cooling GaAs Standard Cell LSIs for 10 Gbit/s Optical Communication Systems
Yasunori OGAWA Kuniichi IKEMURA Shouhei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4 ; pp. 489-495
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
GaAsDCFLSDHstandard cellnatural air-cooling
 Summary | Full Text:PDF

A Low-Voltage GaAs One-Chip Oscillator IC for Laser-Diode Noise Suppression
Tsuyoshi TANAKA Hideo NAGAI Daisuke UEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1246-1251
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
GaAsone-chiposcillatorBSTlaser diode
 Summary | Full Text:PDF

Low Power Dissipation GaAs DCFL 2.5 Gbps 16-bit Multiplexer/Demultiplexer LSIs
Norio HIGASHISAKA Masaaki SHIMADA Akira OHTA Kenji HOSOGI Kazuo KUBO Noriyuki TANINO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1195-1202
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
MUXDEMUXGaAs2.5 Gbpspower
 Summary | Full Text:PDF

A GaAs Single Voltage Controlled RF Switch IC
Kazuo MIYATSUJI Daisuke UEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/08/25
Vol. E78-C  No. 8 ; pp. 931-935
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
GaAsMESFETswitchBST
 Summary | Full Text:PDF

A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs
Kazumi NISHIMURA Kiyomitsu ONODERA Kou INOUE Masami TOKUMITSU Fumiaki HYUGA Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/08/25
Vol. E78-C  No. 8 ; pp. 907-910
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
WSiNInGaPasymmetric LDD structureGaAsMMIC
 Summary | Full Text:PDF

Fast Atom Beam (FAB) Processing with Separated Masks
Masahiro HATAKEYAMA Katsunori ICHIKI Tadasuke KOBATA Masayuki NAKAO Yotaro HATAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/02/25
Vol. E78-C  No. 2 ; pp. 174-179
Type of Manuscript:  Special Section PAPER (Special Issue on Micromachines and Micro Electro Mechanical Systems)
Category: 
Keyword: 
fast atom beam (FAB)patterned maskGaAs3-D processingoverlapped etching
 Summary | Full Text:PDF

Design of a 3.2 GHz 50 mW 0.5 µm GaAs PLL-Based Clock Generator with 1 V Power Supply
Tadayoshi ENOMOTO Toshiyuki OKUYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/12/25
Vol. E77-C  No. 12 ; pp. 1957-1965
Type of Manuscript:  Special Section PAPER (Special Issue on Multimedia, Analog and Processing LSIs)
Category: Processor Interfaces
Keyword: 
phase-locked loop (PLL)clock pulse generator (CG)voltage controlled ring oscillater (VCO)VCO gainGaAsMESFETDCFL circuitpull-in frequencypull-in rangepull-in timelock rangelock timelocked state
 Summary | Full Text:PDF

Growth and Characterization of Nanometer-Scale GaAs, AlGaAs and GaAs/InAs Wires
Kenji HIRUMA Hisaya MURAKOSHI Masamitsu YAZAWA Kensuke OGAWA Satoru FUKUHARA Masataka SHIRAI Toshio KATSUYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1420-1425
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
GaAsInAsquantum wirewhiskerSTM
 Summary | Full Text:PDF

Selective Growth of GaAs by Pulsed-Jet Epitaxy
Yoshiki SAKUMA Shunich MUTO Naoki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1414-1419
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
selective epitaxyatomic layer epitaxy (ALE)MOVPEpulsed-jet epitaxyGaAsSiO2 mask
 Summary | Full Text:PDF

Three-Dimensional Passive Elements for Compact GaAs MMICs
Makoto HIRANO Yuhki IMAI Ichihiko TOYODA Kenjiro NISHIKAWA Masami TOKUMITSU Kazuyoshi ASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/06/25
Vol. E76-C  No. 6 ; pp. 961-967
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions)
Category: 
Keyword: 
three-dimensionalpassive elementsGaAsMMICs
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Integrated Circuits for Ultra-High-Speed Optical Fiber Transmission Systems
Kohji HOHKAWA Shinji MATSUOKA Kazuo HAGIMOTO Kiyoshi NAKAGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/01/25
Vol. E76-C  No. 1 ; pp. 68-77
Type of Manuscript:  INVITED PAPER (Special Issue on Opto-Electronics and LSI)
Category: LSI Technology for Opto-Electronics
Keyword: 
optical fibertransmission systemLSIGaAsSi
 Summary | Full Text:PDF

A GaAs 88 Self-Routing Switch LSI for ATM Switching System
Shouhei SEKI Hiroyuki YAMADA Masanori TSUNOTANI Yoshiaki SANO Yasushi KAWAKAMI Masahiro AKIYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10 ; pp. 1127-1132
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
GaAsB-ISDNATMhardware switch
 Summary | Full Text:PDF