Keyword : GaAs MESFET


Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs
Kazuya NISHIHORI Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/08/01
Vol. E90-C  No. 8 ; pp. 1643-1649
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
GaAs MESFETburied-p-typep-pocket-typeI-V kinkimpact ionizationhole accumulation
 Summary | Full Text:PDF(366.5KB)

HEMT: Looking Back at Its Successful Commercialization
Takashi MIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1908-1910
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
high electron mobility transistorHEMTGaAs MESFETradio telescopebroadcasting satellite
 Summary | Full Text:PDF(184.2KB)

Analysis of Tradeoffs between Efficiency, Power and Hot-Electron Reliability in GaAs MESFETs
Yevgeniy A. TKACHENKO Ce-Jun WEI Aleksei P. KLIMASHOV Dylan BARTLE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/25
Vol. E82-C  No. 7 ; pp. 1061-1066
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
Keyword: 
GaAs MESFETpower amplifierhot-electron reliability
 Summary | Full Text:PDF(643.4KB)

A 22-Gbit/s Static Decision IC Made with a Novel D-Type Flip-Flop
Koichi NARAHARA Taiichi OTSUJI Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 559-561
Type of Manuscript:  LETTER
Category: Electronic Circuits
Keyword: 
decision ICGaAs MESFETstatic D-FFSCFL circuitry
 Summary | Full Text:PDF(282.3KB)

Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding
Hiroyuki KIKUCHI Hideki TSUNETSUGU Makoto HIRANO Satoshi YAMAGUCHI Yuhki IMAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 475-482
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
Keyword: 
GaAs MESFETamplifierdistributormicrostrip lineflip chip
 Summary | Full Text:PDF(573.9KB)

GaAs FET Current-Mode Integrators and Their Application to Filters
Nobukazu TAKAI Nobuo FUJII 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1999/02/25
Vol. E82-A  No. 2 ; pp. 320-326
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category: 
Keyword: 
GaAs MESFETcurrent-modecurrent mirror
 Summary | Full Text:PDF(447.5KB)

A New Broadband Buffer Circuit Technique and Its Application to a 10-Gbit/s Decision Circuit Using Production-Level 0. 5 µm GaAs MESFETs
Miyo MIYASHITA Naoto ANDOH Kazuya YAMAMOTO Junichi NAKAGAWA Etsuji OMURA Masao AIGA Yoshikazu NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/10/25
Vol. E81-C  No. 10 ; pp. 1627-1638
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
GaAs MESFETbuffer circuitdecision circuitpeaking inductorsource-follower
 Summary | Full Text:PDF(964.4KB)

An Analytical Toggle Frequency Expression for Source-Coupled FET Logic (SCFL) Frequency Dividers
Koichi MURATA Taiichi OTSUJI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/07/25
Vol. E81-C  No. 7 ; pp. 1106-1111
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
analytical expressiontoggle frequencySCFLfrequency dividerGaAs MESFET
 Summary | Full Text:PDF(590.9KB)

A 1. 9-GHz-Band Single-Chip GaAs T/R-MMIC Front-End Operating with a Single Voltage Supply of 2 V
Kazuya YAMAMOTO Takao MORIWAKI Yutaka YOSHI Kenichiro CHOMEI Takayuki FUJII Jun OTSUJI Yukio MIYAZAKI Kazuo NISHITANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/07/25
Vol. E81-C  No. 7 ; pp. 1112-1121
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
GaAs MESFETMMIC front-endsingle-chipvoltage-doublernegative-voltage generator
 Summary | Full Text:PDF(1.1MB)

A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs
Kazuya NISHIHORI Atsushi KAMEYAMA Yoshiaki KITAURA Yoshikazu TANABE Masakatsu MIHARA Misao YOSHIMURA Mayumi HIROSE Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/12/25
Vol. E80-C  No. 12 ; pp. 1586-1591
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies)
Category: 
Keyword: 
GaAs MESFETburied channelion-implantationMMICpower-added efficiencynoise figure
 Summary | Full Text:PDF(551.1KB)

A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9 GHz PHS
Atsushi KAMEYAMA Katsue K.KAWAKYU Yoshiko IKEDA Masami NAGAOKA Kenji ISHIDA Tomohiro NITTA Misao YOSHIMURA Yoshiaki KITAURA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6 ; pp. 788-793
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
MMICSPDT switch ICGaAs MESFETresonatorsingle power supply operationpersonal handy phone system
 Summary | Full Text:PDF(574.9KB)

Low Consumption Power Application of Pulse-Doped GaAs MESFET's
Nobuo SHIGA Kenji OTOBE Nobuhiro KUWATA Ken-ichiro MATSUZAKI Shigeru NAKAJIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/04/25
Vol. E80-C  No. 4 ; pp. 597-603
Type of Manuscript:  PAPER
Category: Quantum Electronics
Keyword: 
microwave and millimeter wave technologyGaAs MESFETpower amplifierlow distortionlow consumption power
 Summary | Full Text:PDF(690.4KB)

A New GaAs Negative Voltage Generator for a Power Amplifier Applied to a Single-Chip T/R-MMIC Front-End
Kazuya YAMAMOTO Kosei MAEMURA Nobuyuki KASAI Yutaka YOSHII Yukio MIYAZAKI Masatoshi NAKAYAMA Noriko OGATA Tadashi TAKAGI Mutsuyuki OTSUBO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/12/25
Vol. E79-C  No. 12 ; pp. 1741-1750
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
negative voltage generatorGaAs MESFETpower amplifireMMIC front-end
 Summary | Full Text:PDF(1MB)

Modeling on Statistical Distribution of Optimal Noise Figure in Pulse-Doped GaAs MESFET's
Nobuo SHIGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/10/25
Vol. E79-C  No. 10 ; pp. 1442-1448
Type of Manuscript:  PAPER
Category: Microwave and Millimeter Wave Technology
Keyword: 
microwave and millimeter wave technologyGaAs MESFEToptimal noise figuremodelingstatistical distribution
 Summary | Full Text:PDF(548.6KB)

A 0.1 µm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications
Masami TOKUMITSU Kazumi NISHIMURA Makoto HIRANO Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1189-1194
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
WSiNrefractory metalfrequency dividerGaAs MESFETBP-LDD
 Summary | Full Text:PDF(545.5KB)

12 GHz Low-Noise MMIC Amplifier with GaAs Pulse-Doped MESFET's
Nobuo SHIGA Shigeru NAKAJIMA Nobuhiro KUWATA Kenji OTOBE Takeshi SEKIGUCHI Ken-ichiro MATSUZAKI Hideki HAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1500-1506
Type of Manuscript:  PAPER
Category: Microwave and Millimeter Wave Technology
Keyword: 
MMIClow-noiseamplifierGaAs MESFET
 Summary | Full Text:PDF(650.4KB)

GaAs MESFET Circuit Structures Based on Virtual Ground Concept for High-Performance ASICs
Shoichi SHIMIZU Yukio KAMATANI Yoshiaki KITAURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/12/25
Vol. E76-C  No. 12 ; pp. 1835-1841
Type of Manuscript:  Special Section PAPER (Special Issue on ASICs for Automotive Electronics)
Category: 
Keyword: 
integrated electronicselectronics circuitsGaAs MESFETDCFL
 Summary | Full Text:PDF(649.5KB)

10Gbit/s, 35mV Decision IC Using 0.2µm GaAs MESFETs
Masanobu OHHATA Minoru TOGASHI Koichi MURATA Satoshi YAMAGUCHI Masao SUZUKI Kazuo HAGIMOTO 
Publication:   IEICE TRANSACTIONS on Communications
Publication Date: 1993/07/25
Vol. E76-B  No. 7 ; pp. 745-747
Type of Manuscript:  Special Section LETTER (Special Section of Letters Selected from the 1992 IEICE Fall Conference and the 1993 IEICE Spring Conference)
Category: 
Keyword: 
decision ICdecision circuitGaAs MESFETLSCFLSCFL interfaceSAINT
 Summary | Full Text:PDF(274.2KB)

Computer-Aided Analysis of GaAs MESFETs with p-Buffer Layer on the Semi-Insulating Substrate
Kazushige HORIO Naohisa OKUMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10 ; pp. 1140-1145
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
GaAs MESFETp-buffer layerdeep levelsmall-signal parametersdrain-current transient
 Summary | Full Text:PDF(462.3KB)