IEICE Trans

Keyword : GaAs MESFET

Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs Kazuya NISHIHORI Yasuyuki MIYAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/08/01 Vol. E90-C No. 8 ; pp. 1643-1649 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: GaAs MESFET, buried-p-type, p-pocket-type, I-V kink, impact ionization, hole accumulation,
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HEMT: Looking Back at Its Successful Commercialization Takashi MIMURA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 1908-1910 Type of Manuscript: INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: high electron mobility transistor, HEMT, GaAs MESFET, radio telescope, broadcasting satellite,
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Analysis of Tradeoffs between Efficiency, Power and Hot-Electron Reliability in GaAs MESFETs Yevgeniy A. TKACHENKO Ce-Jun WEI Aleksei P. KLIMASHOV Dylan BARTLE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/07/25 Vol. E82-C No. 7 ; pp. 1061-1066 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology) Category: Active Devices and Circuits Keyword: GaAs MESFET, power amplifier, hot-electron reliability,
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A 22-Gbit/s Static Decision IC Made with a Novel D-Type Flip-Flop Koichi NARAHARA Taiichi OTSUJI Masami TOKUMITSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/25 Vol. E82-C No. 3 ; pp. 559-561 Type of Manuscript: LETTER Category: Electronic Circuits Keyword: decision IC, GaAs MESFET, static D-FF, SCFL circuitry,
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Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding Hiroyuki KIKUCHI Hideki TSUNETSUGU Makoto HIRANO Satoshi YAMAGUCHI Yuhki IMAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/25 Vol. E82-C No. 3 ; pp. 475-482 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Compound Semiconductor Devices Keyword: GaAs MESFET, amplifier, distributor, microstrip line, flip chip,
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GaAs FET Current-Mode Integrators and Their Application to Filters Nobukazu TAKAI Nobuo FUJII
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 1999/02/25 Vol. E82-A No. 2 ; pp. 320-326 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics) Category: Keyword: GaAs MESFET, current-mode, current mirror,
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A New Broadband Buffer Circuit Technique and Its Application to a 10-Gbit/s Decision Circuit Using Production-Level 0. 5 µm GaAs MESFETs Miyo MIYASHITA Naoto ANDOH Kazuya YAMAMOTO Junichi NAKAGAWA Etsuji OMURA Masao AIGA Yoshikazu NAKAYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/10/25 Vol. E81-C No. 10 ; pp. 1627-1638 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: GaAs MESFET, buffer circuit, decision circuit, peaking inductor, source-follower,
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A 1. 9-GHz-Band Single-Chip GaAs T/R-MMIC Front-End Operating with a Single Voltage Supply of 2 V Kazuya YAMAMOTO Takao MORIWAKI Yutaka YOSHI Kenichiro CHOMEI Takayuki FUJII Jun OTSUJI Yukio MIYAZAKI Kazuo NISHITANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/07/25 Vol. E81-C No. 7 ; pp. 1112-1121 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: GaAs MESFET, MMIC front-end, single-chip, voltage-doubler, negative-voltage generator,
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An Analytical Toggle Frequency Expression for Source-Coupled FET Logic (SCFL) Frequency Dividers Koichi MURATA Taiichi OTSUJI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/07/25 Vol. E81-C No. 7 ; pp. 1106-1111 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: analytical expression, toggle frequency, SCFL, frequency divider, GaAs MESFET,
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A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs Kazuya NISHIHORI Atsushi KAMEYAMA Yoshiaki KITAURA Yoshikazu TANABE Masakatsu MIHARA Misao YOSHIMURA Mayumi HIROSE Naotaka UCHITOMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/12/25 Vol. E80-C No. 12 ; pp. 1586-1591 Type of Manuscript: Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies) Category: Keyword: GaAs MESFET, buried channel, ion-implantation, MMIC, power-added efficiency, noise figure,
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A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9 GHz PHS Atsushi KAMEYAMA Katsue K.KAWAKYU Yoshiko IKEDA Masami NAGAOKA Kenji ISHIDA Tomohiro NITTA Misao YOSHIMURA Yoshiaki KITAURA Naotaka UCHITOMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/06/25 Vol. E80-C No. 6 ; pp. 788-793 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices) Category: Keyword: MMIC, SPDT switch IC, GaAs MESFET, resonator, single power supply operation, personal handy phone system,
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Low Consumption Power Application of Pulse-Doped GaAs MESFET's Nobuo SHIGA Kenji OTOBE Nobuhiro KUWATA Ken-ichiro MATSUZAKI Shigeru NAKAJIMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/04/25 Vol. E80-C No. 4 ; pp. 597-603 Type of Manuscript: PAPER Category: Quantum Electronics Keyword: microwave and millimeter wave technology, GaAs MESFET, power amplifier, low distortion, low consumption power,
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A New GaAs Negative Voltage Generator for a Power Amplifier Applied to a Single-Chip T/R-MMIC Front-End Kazuya YAMAMOTO Kosei MAEMURA Nobuyuki KASAI Yutaka YOSHII Yukio MIYAZAKI Masatoshi NAKAYAMA Noriko OGATA Tadashi TAKAGI Mutsuyuki OTSUBO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/12/25 Vol. E79-C No. 12 ; pp. 1741-1750 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: negative voltage generator, GaAs MESFET, power amplifire, MMIC front-end,
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Modeling on Statistical Distribution of Optimal Noise Figure in Pulse-Doped GaAs MESFET's Nobuo SHIGA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/10/25 Vol. E79-C No. 10 ; pp. 1442-1448 Type of Manuscript: PAPER Category: Microwave and Millimeter Wave Technology Keyword: microwave and millimeter wave technology, GaAs MESFET, optimal noise figure, modeling, statistical distribution,
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A 0.1 µm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications Masami TOKUMITSU Kazumi NISHIMURA Makoto HIRANO Kimiyoshi YAMASAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/09/25 Vol. E78-C No. 9 ; pp. 1189-1194 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices) Category: Keyword: WSiN, refractory metal, frequency divider, GaAs MESFET, BP-LDD,
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12 GHz Low-Noise MMIC Amplifier with GaAs Pulse-Doped MESFET's Nobuo SHIGA Shigeru NAKAJIMA Nobuhiro KUWATA Kenji OTOBE Takeshi SEKIGUCHI Ken-ichiro MATSUZAKI Hideki HAYASHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/09/25 Vol. E77-C No. 9 ; pp. 1500-1506 Type of Manuscript: PAPER Category: Microwave and Millimeter Wave Technology Keyword: MMIC, low-noise, amplifier, GaAs MESFET,
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GaAs MESFET Circuit Structures Based on Virtual Ground Concept for High-Performance ASICs Shoichi SHIMIZU Yukio KAMATANI Yoshiaki KITAURA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/12/25 Vol. E76-C No. 12 ; pp. 1835-1841 Type of Manuscript: Special Section PAPER (Special Issue on ASICs for Automotive Electronics) Category: Keyword: integrated electronics, electronics circuits, GaAs MESFET, DCFL,
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10Gbit/s, 35mV Decision IC Using 0.2µm GaAs MESFETs Masanobu OHHATA Minoru TOGASHI Koichi MURATA Satoshi YAMAGUCHI Masao SUZUKI Kazuo HAGIMOTO
Publication: IEICE TRANSACTIONS on Communications Publication Date: 1993/07/25 Vol. E76-B No. 7 ; pp. 745-747 Type of Manuscript: Special Section LETTER (Special Section of Letters Selected from the 1992 IEICE Fall Conference and the 1993 IEICE Spring Conference) Category: Keyword: decision IC, decision circuit, GaAs MESFET, LSCFL, SCFL interface, SAINT,
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Computer-Aided Analysis of GaAs MESFETs with p-Buffer Layer on the Semi-Insulating Substrate Kazushige HORIO Naohisa OKUMURA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/10/25 Vol. E75-C No. 10 ; pp. 1140-1145 Type of Manuscript: Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits) Category: Keyword: GaAs MESFET, p-buffer layer, deep level, small-signal parameters, drain-current transient,
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