Keyword : GIDL


Design and Investigation of Silicon Gate-All-Around Junctionless Field-Effect Transistor Using a Step Thickness Gate Oxide
Wenlun ZHANG Baokang WANG 
Publication:   
Publication Date: 2021/08/01
Vol. E104-C  No. 8 ; pp. 379-385
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
JLFETTCADGIDLBTBTGAA transistor
 Summary | Full Text:PDF(2.9MB)

Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS
Seung-Hyun SONG Jae-Chul KIM Sung-Woo JUNG Yoon-Ha JEONG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5 ; pp. 761-766
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
GIDLjunctionhalonanoscale CMOS
 Summary | Full Text:PDF(646.9KB)

Source/Drain Optimization of Double Gate FinFET Considering GIDL for Low Standby Power Devices
Katsuhiko TANAKA Kiyoshi TAKEUCHI Masami HANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4 ; pp. 842-847
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: Device
Keyword: 
FinFETdouble gateGIDLdevice simulationLSTP
 Summary | Full Text:PDF(616.8KB)

Characterization and Modeling of Gate-Induced-Drain-Leakage
Fabien GILIBERT Denis RIDEAU Alexandre DRAY Francois AGUT Michel MINONDO Andre JUGE Pascal MASSON Rachid BOUCHAKOUR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5 ; pp. 829-837
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
GIDLcompact modelMOSFETelectric fieldtrap assisted tunneling
 Summary | Full Text:PDF(1.6MB)