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| Keyword : GIDL
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Design and Investigation of Silicon Gate-All-Around Junctionless Field-Effect Transistor Using a Step Thickness Gate Oxide
Wenlun ZHANG Baokang WANG | Publication:
Publication Date: 2021/08/01
Vol. E104-C
No. 8 ;
pp. 379-385
Type of Manuscript:
PAPER
Category: Semiconductor Materials and Devices
Keyword:
JLFET, TCAD, GIDL, BTBT, GAA transistor, | | | Summary | Full Text:PDF(2.9MB) | |
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Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS
Seung-Hyun SONG Jae-Chul KIM Sung-Woo JUNG Yoon-Ha JEONG | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C
No. 5 ;
pp. 761-766
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category:
Keyword:
GIDL, junction, halo, nanoscale CMOS, | | | Summary | Full Text:PDF(646.9KB) | |
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Source/Drain Optimization of Double Gate FinFET Considering GIDL for Low Standby Power Devices
Katsuhiko TANAKA Kiyoshi TAKEUCHI Masami HANE | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C
No. 4 ;
pp. 842-847
Type of Manuscript:
Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: Device
Keyword:
FinFET, double gate, GIDL, device simulation, LSTP, | | | Summary | Full Text:PDF(616.8KB) | |
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