Keyword : GIDL


Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS
Seung-Hyun SONG Jae-Chul KIM Sung-Woo JUNG Yoon-Ha JEONG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5 ; pp. 761-766
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
GIDLjunctionhalonanoscale CMOS
 Summary | Full Text:PDF

Source/Drain Optimization of Double Gate FinFET Considering GIDL for Low Standby Power Devices
Katsuhiko TANAKA Kiyoshi TAKEUCHI Masami HANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4 ; pp. 842-847
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: Device
Keyword: 
FinFETdouble gateGIDLdevice simulationLSTP
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Characterization and Modeling of Gate-Induced-Drain-Leakage
Fabien GILIBERT Denis RIDEAU Alexandre DRAY Francois AGUT Michel MINONDO Andre JUGE Pascal MASSON Rachid BOUCHAKOUR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5 ; pp. 829-837
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
GIDLcompact modelMOSFETelectric fieldtrap assisted tunneling
 Summary | Full Text:PDF