IEICE Trans

Keyword : FinFET

Relationship of Channel and Surface Orientation to Mechanical and Electrical Stresses on N-Type FinFETs Wen-Teng CHANG Shih-Wei LIN Min-Cheng CHEN Wen-Kuan YEH
Publication: Publication Date: 2019/06/01 Vol. E102-C No. 6 ; pp. 429-434 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: FinFET, channel orientation, surface orientation, mechanical stress, strain engineering, bias temperature instability, hot carrier injection,
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Low Power High Performance FinFET Standard Cells Based on Mixed Back Biasing Technology Tian WANG Xiaoxin CUI Kai LIAO Nan LIAO Xiaole CUI Dunshan YU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/08/01 Vol. E99-C No. 8 ; pp. 974-983 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: VLSI, FinFET, standard cell, stacking, back biasing,
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Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method Sangheon OH Changhwan SHIN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/05/01 Vol. E99-C No. 5 ; pp. 541-543 Type of Manuscript: BRIEF PAPER Category: Keyword: random variation, FinFET, SRAM, worst-case sampling,
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Technology of FinFET for High RF and Analog/Mixed-Signal Performance Circuits Tatsuya OHGURO Satoshi INABA Akio KANEKO Kimitoshi OKANO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2015/06/01 Vol. E98-C No. 6 ; pp. 455-460 Type of Manuscript: INVITED PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies) Category: Keyword: FinFET, analog, RF, flicker noise, f_T, f_max,
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Independent-Double-Gate FinFET SRAM Technology Kazuhiko ENDO Shin-ichi OUCHI Takashi MATSUKAWA Yongxun LIU Meishoku MASAHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/04/01 Vol. E96-C No. 4 ; pp. 413-423 Type of Manuscript: INVITED PAPER (Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology) Category: Keyword: multi-gate devices, FinFET, SRAM, noise margin,
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High-Frequency Precise Characterization of Intrinsic FinFET Channel Hideo SAKAI Shinichi O'UCHI Takashi MATSUKAWA Kazuhiko ENDO Yongxun LIU Junichi TSUKADA Yuki ISHIKAWA Tadashi NAKAGAWA Toshihiro SEKIGAWA Hanpei KOIKE Kunihiro SAKAMOTO Meishoku MASAHARA Hiroki ISHIKURO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/04/01 Vol. E95-C No. 4 ; pp. 752-760 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: FinFET, SOI, De-embedding, RF, device modeling,
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Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices Seongjae CHO Jung Hoon LEE Yoon KIM Jang-Gn YUN Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 ; pp. 596-601 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Flash/Advanced Memory Keyword: NAND, flash memory, program inhibition, self-boosting, FinFET, device simulation,
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Design of 30 nm FinFETs and Double Gate MOSFETs with Halo Structure Tetsuo ENDOH Koji SAKUI Yukio YASUDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 ; pp. 534-539 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Multi-Gate Technology Keyword: FinFET, halo I/I, MOSFET, threshold voltage roll-off, S-factor,
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Adaptive Circuits for the 0.5-V Nanoscale CMOS Era Kiyoo ITOH Masanao YAMAOKA Takashi OSHIMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/03/01 Vol. E93-C No. 3 ; pp. 216-233 Type of Manuscript: INVITED PAPER (Special Section on Circuits and Design Techniques for Advanced Large Scale Integration) Category: Keyword: minimum operating voltage, SRAM, DRAM, FD-SOI, FinFET,
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FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction Shin-ichi O'UCHI Meishoku MASAHARA Kazuhiko ENDO Yongxun LIU Takashi MATSUKAWA Kunihiro SAKAMOTO Toshihiro SEKIGAWA Hanpei KOIKE Eiichi SUZUKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/04/01 Vol. E91-C No. 4 ; pp. 534-542 Type of Manuscript: Special Section PAPER (Special Section on Advanced Technologies in Digital LSIs and Memories) Category: Keyword: SRAM, FinFET, 4T-FinFET, standby power, dynamic threshold-voltage control,
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Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations Toshiro HIRAMOTO Toshiharu NAGUMO Tetsu OHTOU Kouki YOKOYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/04/01 Vol. E90-C No. 4 ; pp. 836-841 Type of Manuscript: INVITED PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies) Category: Keyword: SOI, body factor, body effect, FinFET, multigate MOSFET,
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Source/Drain Optimization of Double Gate FinFET Considering GIDL for Low Standby Power Devices Katsuhiko TANAKA Kiyoshi TAKEUCHI Masami HANE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/04/01 Vol. E90-C No. 4 ; pp. 842-847 Type of Manuscript: Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies) Category: Device Keyword: FinFET, double gate, GIDL, device simulation, LSTP,
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