Keyword : FinFET


Relationship of Channel and Surface Orientation to Mechanical and Electrical Stresses on N-Type FinFETs
Wen-Teng CHANG Shih-Wei LIN Min-Cheng CHEN Wen-Kuan YEH 
Publication:   
Publication Date: 2019/06/01
Vol. E102-C  No. 6 ; pp. 429-434
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
FinFETchannel orientationsurface orientationmechanical stressstrain engineeringbias temperature instabilityhot carrier injection
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Low Power High Performance FinFET Standard Cells Based on Mixed Back Biasing Technology
Tian WANG Xiaoxin CUI Kai LIAO Nan LIAO Xiaole CUI Dunshan YU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/08/01
Vol. E99-C  No. 8 ; pp. 974-983
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
VLSIFinFETstandard cellstackingback biasing
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Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method
Sangheon OH Changhwan SHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5 ; pp. 541-543
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
random variationFinFETSRAMworst-case sampling
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Technology of FinFET for High RF and Analog/Mixed-Signal Performance Circuits
Tatsuya OHGURO Satoshi INABA Akio KANEKO Kimitoshi OKANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/06/01
Vol. E98-C  No. 6 ; pp. 455-460
Type of Manuscript:  INVITED PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
FinFETanalogRFflicker noisefTfmax
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Independent-Double-Gate FinFET SRAM Technology
Kazuhiko ENDO Shin-ichi OUCHI Takashi MATSUKAWA Yongxun LIU Meishoku MASAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/04/01
Vol. E96-C  No. 4 ; pp. 413-423
Type of Manuscript:  INVITED PAPER (Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
multi-gate devicesFinFETSRAMnoise margin
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High-Frequency Precise Characterization of Intrinsic FinFET Channel
Hideo SAKAI Shinichi O'UCHI Takashi MATSUKAWA Kazuhiko ENDO Yongxun LIU Junichi TSUKADA Yuki ISHIKAWA Tadashi NAKAGAWA Toshihiro SEKIGAWA Hanpei KOIKE Kunihiro SAKAMOTO Meishoku MASAHARA Hiroki ISHIKURO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4 ; pp. 752-760
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
FinFETSOIDe-embeddingRFdevice modeling
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Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices
Seongjae CHO Jung Hoon LEE Yoon KIM Jang-Gn YUN Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 596-601
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
Keyword: 
NANDflash memoryprogram inhibitionself-boostingFinFETdevice simulation
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Design of 30 nm FinFETs and Double Gate MOSFETs with Halo Structure
Tetsuo ENDOH Koji SAKUI Yukio YASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 534-539
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Multi-Gate Technology
Keyword: 
FinFEThalo I/IMOSFETthreshold voltage roll-offS-factor
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Adaptive Circuits for the 0.5-V Nanoscale CMOS Era
Kiyoo ITOH Masanao YAMAOKA Takashi OSHIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/03/01
Vol. E93-C  No. 3 ; pp. 216-233
Type of Manuscript:  INVITED PAPER (Special Section on Circuits and Design Techniques for Advanced Large Scale Integration)
Category: 
Keyword: 
minimum operating voltageSRAMDRAMFD-SOIFinFET
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FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
Shin-ichi O'UCHI Meishoku MASAHARA Kazuhiko ENDO Yongxun LIU Takashi MATSUKAWA Kunihiro SAKAMOTO Toshihiro SEKIGAWA Hanpei KOIKE Eiichi SUZUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/04/01
Vol. E91-C  No. 4 ; pp. 534-542
Type of Manuscript:  Special Section PAPER (Special Section on Advanced Technologies in Digital LSIs and Memories)
Category: 
Keyword: 
SRAMFinFET4T-FinFETstandby powerdynamic threshold-voltage control
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Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations
Toshiro HIRAMOTO Toshiharu NAGUMO Tetsu OHTOU Kouki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4 ; pp. 836-841
Type of Manuscript:  INVITED PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: 
Keyword: 
SOIbody factorbody effectFinFETmultigate MOSFET
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Source/Drain Optimization of Double Gate FinFET Considering GIDL for Low Standby Power Devices
Katsuhiko TANAKA Kiyoshi TAKEUCHI Masami HANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4 ; pp. 842-847
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: Device
Keyword: 
FinFETdouble gateGIDLdevice simulationLSTP
 Summary | Full Text:PDF