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A 2-Mb 1T1C FeRAM Prototype Based on PMOS-Gating Cell Structure Yeonbae CHUNG Jung-Hyun KIM Jae-Eun YOON | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C
No. 10 ;
pp. 1686-1693
Type of Manuscript:
Special Section PAPER (Special Section on New Era of Nonvolatile Memories)
Category: Ferroelectric Memory Keyword: FeRAM, memory, nonvolatile, ferroelectrics, | | Summary | Full Text:PDF | |
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