Keyword : FeRAM

A Genuine Power-Gatable Reconfigurable Logic Chip with FeRAM Cells
Masahiro IIDA Masahiro KOGA Kazuki INOUE Motoki AMAGASAKI Yoshinobu ICHIDA Mitsuro SAJI Jun IIDA Toshinori SUEYOSHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/04/01
Vol. E94-C  No. 4 ; pp. 548-556
Type of Manuscript:  Special Section PAPER (Special Section on Circuits and Design Techniques for Advanced Large Scale Integration)
Category: 
Keyword: 
reconfigurable logic, FeRAM, power-gating, non-volatile flip-flop, NV-FF, VGLC, 
 Summary | Full Text:PDF
A Reliable 1T1C FeRAM Using a Thermal History Tracking 2T2C Dual Reference Level Technique for a Smart Card Application Chip
Shoichiro KAWASHIMA Isao FUKUSHI Keizo MORITA Ken-ichi NAKABAYASHI Mitsuharu NAKAZAWA Kazuaki YAMANE Tomohisa HIRAYAMA Toru ENDO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/10/01
Vol. E90-C  No. 10 ; pp. 1941-1948
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Technology toward Frontiers of New Market)
Category: Next-Generation Memory for SoC
Keyword: 
FeRAM, BGS, 2T2C-reference, FIP, self-timing, ECC, Smart Card, 
 Summary | Full Text:PDF
A 2-Mb 1T1C FeRAM Prototype Based on PMOS-Gating Cell Structure
Yeonbae CHUNG Jung-Hyun KIM Jae-Eun YOON 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C  No. 10 ; pp. 1686-1693
Type of Manuscript:  Special Section PAPER (Special Section on New Era of Nonvolatile Memories)
Category: Ferroelectric Memory
Keyword: 
FeRAM, memory, nonvolatile, ferroelectrics, 
 Summary | Full Text:PDF
Electrical Properties of Sol-Gel Derived Ferroelectric Pb(Zr,Ti)O3 Films Fabricated Using Low-Pressure Consolidation Process
Takaaki MIYASAKO Masaru SENOO Eisuke TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C  No. 10 ; pp. 1694-1699
Type of Manuscript:  Special Section PAPER (Special Section on New Era of Nonvolatile Memories)
Category: Ferroelectric Memory
Keyword: 
PZT, sol-gel method, FeRAM, low-pressure consolidation, 
 Summary | Full Text:PDF
Overview and Trend of Chain FeRAM Architecture
Daisaburo TAKASHIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6 ; pp. 747-756
Type of Manuscript:  INVITED PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectric, nonvolatile, memory, FeRAM, chain FeRAM, 
 Summary | Full Text:PDF
Estimation of Imprint Failure Lifetime in FeRAM with Pt/SrBi2Ta2O9/Pt Capacitor
Young Min KANG Seaung Suk LEE Beelyong YANG Choong Heui CHUNG Hun Woo KYE Suk Kyoung HONG Nam Soo KANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6 ; pp. 757-762
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectric, nonvolatile, memory, FeRAM, imprint, reliability, 
 Summary | Full Text:PDF
Ferroelectric Memory Circuit Technology and the Application to Contactless IC Card
Koji ASARI Hiroshige HIRANO Toshiyuki HONDA Tatsumi SUMI Masato TAKEO Nobuyuki MORIWAKI George NAKANE Tetsuji NAKAKUMA Shigeo CHAYA Toshio MUKUNOKI Yuji JUDAI Masamichi AZUMA Yasuhiro SHIMADA Tatsuo OTSUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 488-496
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
FeRAM, high speed, low voltage, low power consumption, non-volatile, contactless IC card, 
 Summary | Full Text:PDF
Di/Ferroelectric Properties of Bismuth Based Layered Ferroelectric Films for Application to Non-volatile Memories
Hitoshi TABATA Takeshi YANAGITA Tomoji KAWAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 566-571
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
ferroelectric thin film, non volatile memory, Bi base layer structured ferroelectrics laser ablation, dielectric constant, FeRAM, 
 Summary | Full Text:PDF