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| Keyword : FET
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HFET and HBT Modelling for Circuit Analysis
Iltcho ANGELOV | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C
No. 10 ;
pp. 1968-1976
Type of Manuscript:
INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category:
Keyword:
FET, HBT, models, | | | Summary | Full Text:PDF | |
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Prospects of Electron Spectroscopy of Working Organic Electronic Device Structures
Toshihiro SHIMADA Atsushi KOMA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2002/06/01
Vol. E85-C
No. 6 ;
pp. 1330-1331
Type of Manuscript:
Special Section LETTER (Special Issue on Recent Progress in Organic Molecular Electronics)
Category: Fabrication and Characterization of Thin Films
Keyword:
electron spectroscopy, XPS,UPS, FET, solar cell, | | | Summary | Full Text:PDF | |
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Numerical Analysis for Resonance Properties of Plasma-Wave Field-Effect Transistors and Their Terahertz Applications to Smart Photonic Network Systems
Taiichi OTSUJI Shin NAKAE Hajime KITAMURA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C
No. 10 ;
pp. 1470-1476
Type of Manuscript:
Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword:
plasma wave, resonance, FET, terahertz, virtual carrier, | | | Summary | Full Text:PDF | |
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An InGaP/GaAs Composite Channel FET for High Power Device Applications
Shigeru NAKAJIMA Ken NAKATA Kunio TANAKA Kenji OTOBE | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C
No. 10 ;
pp. 1300-1305
Type of Manuscript:
Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword:
high power device, InGaP, FET, electron transport, | | | Summary | Full Text:PDF | |
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Wide-Band CDMA Distortion Characteristics of an AlGaAs/InGaAs/AlGaAs Heterojunction FET under Various Quiescent Drain Current Operations
Gary HAU Takeshi B. NISHIMURA Naotaka IWATA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C
No. 11 ;
pp. 1928-1935
Type of Manuscript:
Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword:
FET, microwave, amplifier, distortion, simulation, W-CDMA, | | | Summary | Full Text:PDF | |
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A Small-Sized 10 W Module for 1.5 GHz Portable DMCA Radios Using New Power Divider/Combiner
Masahiro MAEDA Morio NAKAMURA Shigeru MORIMOTO Hiroyuki MASATO Yorito OTA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C
No. 6 ;
pp. 751-756
Type of Manuscript:
Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category:
Keyword:
GaAs, power module, high frequency, power divider/combiner, FET, isolation, second-harmonic control, small size, high power, high efficiency, low supply voltage, mobile radio, DMCA, | | | Summary | Full Text:PDF | |
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An lmproved Gate Current Model of GaAs FET's for Nonlinear Circuit Simulation
Shigeru WATANABE Yuji ODA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1996/05/25
Vol. E79-C
No. 5 ;
pp. 606-610
Type of Manuscript:
Special Section PAPER (Special Issue on Microwave Devices for Mobile Communications)
Category: Active Devices
Keyword:
GaAs, FET, microwave, equivalent clrcuit, modeling, simulation, | | | Summary | Full Text:PDF | |
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