IEICE Trans

Keyword : FD-SOI

Temperature-Robust 0.48-V FD-SOI Intermittent Startup Circuit with 300-nA Quiescent Current for Batteryless Wireless Sensor Capable of 1-μA Energy Harvesting Sources Minoru SUDO Fumiyasu UTSUNOMIYA Ami TANAKA Takakuni DOUSEKI
Publication: Publication Date: 2021/02/01 Vol. E104-A No. 2 ; pp. 506-515 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics) Category: Keyword: energy harvesting, voltage detector, charge pump, FD-SOI, depletion-type nMOSFET,
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A 28-nm 484-fJ/writecycle 650-fJ/readcycle 8T Three-Port FD-SOI SRAM for Image Processor Haruki MORI Yohei UMEKI Shusuke YOSHIMOTO Shintaro IZUMI Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/08/01 Vol. E99-C No. 8 ; pp. 901-908 Type of Manuscript: Special Section PAPER (Special Section on Low-Power and High-Speed Chips) Category: Keyword: image memory, multi-port SRAM, 8T, FD-SOI, 28-nm, majority logic,
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A SOI Cache-Tag Memory with Dual-Rail Wordline Scheme Nobutaro SHIBATA Takako ISHIHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/02/01 Vol. E99-C No. 2 ; pp. 316-330 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: 4-way set-associative, cache-tag, CMOS, directed graph, dual-rail wordline, FD-SOI, I/O-separated memory cell, LRU, NRZ-type write-enable signal, SIMOX, SRAM,
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A 0.15-µm FD-SOI Substrate Bias Control SRAM with Inter-Die Variability Compensation Scheme Shunsuke OKUMURA Hidehiro FUJIWARA Kosuke YAMAGUCHI Shusuke YOSHIMOTO Masahiko YOSHIMOTO Hiroshi KAWAGUCHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/04/01 Vol. E95-C No. 4 ; pp. 579-585 Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology) Category: Keyword: SRAM, FD-SOI, Inter-die variation,
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Adaptive Circuits for the 0.5-V Nanoscale CMOS Era Kiyoo ITOH Masanao YAMAOKA Takashi OSHIMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/03/01 Vol. E93-C No. 3 ; pp. 216-233 Type of Manuscript: INVITED PAPER (Special Section on Circuits and Design Techniques for Advanced Large Scale Integration) Category: Keyword: minimum operating voltage, SRAM, DRAM, FD-SOI, FinFET,
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Low-Voltage Embedded RAMs in Nanometer Era Takayuki KAWAHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/04/01 Vol. E90-C No. 4 ; pp. 735-742 Type of Manuscript: INVITED PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies) Category: Keyword: low-voltage, SRAM, DRAM, FD-SOI, twin-cell, embedded RAM,
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Accurate Small-Signal Modeling of FD-SOI MOSFETs Guechol KIM Yoshiyuki SHIMIZU Bunsei MURAKAMI Masaru GOTO Keisuke UEDA Takao KIHARA Toshimasa MATSUOKA Kenji TANIGUCHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/04/01 Vol. E89-C No. 4 ; pp. 517-519 Type of Manuscript: Special Section LETTER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones) Category: Keyword: FD-SOI, MOSFET, RF, modeling, non-quasi-static,
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A 1-V Cyclic A/D Converter Using FD-SOI Sample/Hold Circuits for Sensor Networks Jun TERADA Yasuyuki MATSUYA Shin'ichiro MUTOH Yuichi KADO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 ; pp. 479-483 Type of Manuscript: Special Section PAPER (Special Section on Low-Power LSI and Low-Power IP) Category: Analog Keyword: A/D converter, sample hold, FD-SOI, low voltage,
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Threshold Voltage Mismatch of FD-SOI MOSFETs Yoshiyuki SHIMIZU Toshimasa MATSUOKA Kenji TANIGUCHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/06/01 Vol. E87-C No. 6 ; pp. 1013-1014 Type of Manuscript: Special Section LETTER (Special Section on Analog Circuit and Device Technologies) Category: Keyword: threshold voltage, FD-SOI, floating body effect, DIBL,
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