Keyword : EOT


Flattening Process of Si Surface below 1000 Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation
Dae-Hee HAN Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 669-673
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
surface roughnessHfON gate insulatorECR plasma sputteringplasma oxidationEOT
 Summary | Full Text:PDF

Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta2O5 Gate Stacks
Hoon-Ki LEE S.V. Jagadeesh CHANDRA Kyu-Hwan SHIM Jong-Won YOON Chel-Jong CHOI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 846-849
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
Ta2O5MOSflat band voltageeffective metal workfunctionEOT
 Summary | Full Text:PDF