Keyword : DIBL


Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs
Tomoko MIZUTANI Anil KUMAR Toshiro HIRAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 630-633
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
variabilityMOS transistorthreshold voltageDIBLnormal distributionGumbel distribution
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Device Design of SONOS Flash Memory Cell with Saddle Type Channel Structure
Han-A-Reum JUNG Kyoung-Rok HAN Young-Min KIM Jong-Ho LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5 ; pp. 736-741
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
saddleSONOSside-gaterecess channelDIBL
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The Influence of the Stacked and Double Material Gate Structures on the Short Channel Effects in SOI MOSFETS
Ehsanollah FATHI Ashkan BEHNAM Pouya HASHEMI Behzad ESFANDYARPOUR Morteza FATHIPOUR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/06/01
Vol. E88-C  No. 6 ; pp. 1122-1126
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
Category: Device
Keyword: 
MOSFETdual metal gatestacked gateDIBLshort channel effects
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Threshold Voltage Mismatch of FD-SOI MOSFETs
Yoshiyuki SHIMIZU Toshimasa MATSUOKA Kenji TANIGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/06/01
Vol. E87-C  No. 6 ; pp. 1013-1014
Type of Manuscript:  Special Section LETTER (Special Section on Analog Circuit and Device Technologies)
Category: 
Keyword: 
threshold voltageFD-SOIfloating body effectDIBL
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Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs
Toshiki SAITO Takuya SARAYA Takashi INUKAI Hideaki MAJIMA Toshiharu NAGUMO Toshiro HIRAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1073-1078
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
SOI MOSFETtriangular wireshort channel effectsubthreshold factorDIBL
 Summary | Full Text:PDF