Keyword : Coulomb blockade


Dielectrophoretic Assembly of Gold Nanoparticle Arrays Evaluated in Terms of Room-Temperature Resistance
Yoshinao MIZUGAKI Makoto MORIBAYASHI Tomoki YAGAI Masataka MORIYA Hiroshi SHIMADA Ayumi HIRANO-IWATA Fumihiko HIROSE 
Publication:   
Publication Date: 2020/02/01
Vol. E103-C  No. 2 ; pp. 62-65
Type of Manuscript:  BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword: 
single-electron effectCoulomb blockadehistogramtunnel junction
 Summary | Full Text:PDF(651.1KB)

Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanodot Array Device
Mingu JO Yuki KATO Masashi ARITA Yukinori ONO Akira FUJIWARA Hiroshi INOKAWA Yasuo TAKAHASHI Jung-Bum CHOI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 865-870
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
single electronnanodotlogic gatedot arrayCoulomb blockade
 Summary | Full Text:PDF(2.6MB)

Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots
Taku SHIBAGUCHI Mitsuhisa IKEDA Hideki MURAKAMI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 709-712
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Nanomaterials and Quantum-Effect Devices
Keyword: 
silicon quantum dotMOS memoryfloating gateCoulomb blockade
 Summary | Full Text:PDF(282.2KB)

Effect of Interfacial Space Charges and Coupling Electrodes on Organic Single Electron Tunneling Device
Yutaka NOGUCHI Mitsumasa IWAMOTO Tohru KUBOTA Shinro MASHIKO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/06/01
Vol. E85-C  No. 6 ; pp. 1247-1252
Type of Manuscript:  Special Section PAPER (Special Issue on Recent Progress in Organic Molecular Electronics)
Category: Electronic Devices
Keyword: 
Coulomb blockadeorganic double barrier tunneling junctioninterfacial space charge
 Summary | Full Text:PDF(636.1KB)

Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors
Andreas SCHOLZE Andreas SCHENK Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1242-1246
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Device Modeling and Simulation
Keyword: 
single-electron tunnelingCoulomb blockadeconductance oscillationstransfer Hamiltonian formalism
 Summary | Full Text:PDF(963.9KB)

Multiple-Valued Inverter Using a Single-Electron-Tunneling Circuit
Masamichi AKAZAWA Kentarou KANAAMI Takashi YAMADA Yoshihito AMEMIYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/09/25
Vol. E82-C  No. 9 ; pp. 1607-1614
Type of Manuscript:  Special Section PAPER (Special Issue on Integrated Electronics and New System Paradigms)
Category: Quantum Devices and Circuits
Keyword: 
single electronSETmultiple-valuedCoulomb blockade
 Summary | Full Text:PDF(1013.8KB)

A Simple Digital-to-Analog Conversion Technique Using Single-Electron Transistor
Su Jin AHN Dae Mann KIM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 608-611
Type of Manuscript:  LETTER
Category: Quantum Electronics
Keyword: 
single-electron tunnelingCoulomb blockadedigital-to-analog data conversion
 Summary | Full Text:PDF(331.5KB)

Gate Performance in Resonant Tunneling Single Electron Transistor
Takashi HONDA Seigo TARUCHA David Guy AUSTING 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/01/25
Vol. E81-C  No. 1 ; pp. 2-7
Type of Manuscript:  Special Section PAPER (Special Issue on Technology Challenges for Single Electron Devices)
Category: 
Keyword: 
single electron tunnelingCoulomb oscillationtransistorCoulomb blockaderesonant tunneling
 Summary | Full Text:PDF(579KB)

Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device
Minoru FUJISHIMA Hironobu FUKUI Shuhei AMAKAWA Koichiro HOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7 ; pp. 881-885
Type of Manuscript:  Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Quantum Devices
Keyword: 
short channel devicesingle electronCoulomb blockade
 Summary | Full Text:PDF(491.7KB)

Coulomb Blockade Effects in Edge Quantum Wire SOI-MOSFETs
Akiko OHATA Akira TORIUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11 ; pp. 1586-1589
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
Si-MOSFETCoulomb blockadesingle electron tunnelingedge quantum wire
 Summary | Full Text:PDF(403.8KB)

Si Single-Electron Transistors on SIMOX Substrates
Yasuo TAKAHASHI Akira FUJIWARA Masao NAGASE Hideo NAMATSU Kenji KURIHARA Kazumi IWADATE Katsumi MURASE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11 ; pp. 1503-1508
Type of Manuscript:  INVITED PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
single-electronCoulomb blockadetunnelingpattern fluctuation
 Summary | Full Text:PDF(645.1KB)