IEICE Trans

Keyword : Coulomb blockade

Dielectrophoretic Assembly of Gold Nanoparticle Arrays Evaluated in Terms of Room-Temperature Resistance Yoshinao MIZUGAKI Makoto MORIBAYASHI Tomoki YAGAI Masataka MORIYA Hiroshi SHIMADA Ayumi HIRANO-IWATA Fumihiko HIROSE
Publication: Publication Date: 2020/02/01 Vol. E103-C No. 2 ; pp. 62-65 Type of Manuscript: BRIEF PAPER Category: Semiconductor Materials and Devices Keyword: single-electron effect, Coulomb blockade, histogram, tunnel junction,
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Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanodot Array Device Mingu JO Yuki KATO Masashi ARITA Yukinori ONO Akira FUJIWARA Hiroshi INOKAWA Yasuo TAKAHASHI Jung-Bum CHOI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 ; pp. 865-870 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: single electron, nanodot, logic gate, dot array, Coulomb blockade,
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Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots Taku SHIBAGUCHI Mitsuhisa IKEDA Hideki MURAKAMI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 ; pp. 709-712 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Nanomaterials and Quantum-Effect Devices Keyword: silicon quantum dot, MOS memory, floating gate, Coulomb blockade,
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Effect of Interfacial Space Charges and Coupling Electrodes on Organic Single Electron Tunneling Device Yutaka NOGUCHI Mitsumasa IWAMOTO Tohru KUBOTA Shinro MASHIKO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/06/01 Vol. E85-C No. 6 ; pp. 1247-1252 Type of Manuscript: Special Section PAPER (Special Issue on Recent Progress in Organic Molecular Electronics) Category: Electronic Devices Keyword: Coulomb blockade, organic double barrier tunneling junction, interfacial space charge,
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Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors Andreas SCHOLZE Andreas SCHENK Wolfgang FICHTNER
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/08/25 Vol. E83-C No. 8 ; pp. 1242-1246 Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99)) Category: Device Modeling and Simulation Keyword: single-electron tunneling, Coulomb blockade, conductance oscillations, transfer Hamiltonian formalism,
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Multiple-Valued Inverter Using a Single-Electron-Tunneling Circuit Masamichi AKAZAWA Kentarou KANAAMI Takashi YAMADA Yoshihito AMEMIYA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/09/25 Vol. E82-C No. 9 ; pp. 1607-1614 Type of Manuscript: Special Section PAPER (Special Issue on Integrated Electronics and New System Paradigms) Category: Quantum Devices and Circuits Keyword: single electron, SET, multiple-valued, Coulomb blockade,
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A Simple Digital-to-Analog Conversion Technique Using Single-Electron Transistor Su Jin AHN Dae Mann KIM
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/04/25 Vol. E81-C No. 4 ; pp. 608-611 Type of Manuscript: LETTER Category: Quantum Electronics Keyword: single-electron tunneling, Coulomb blockade, digital-to-analog data conversion,
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Gate Performance in Resonant Tunneling Single Electron Transistor Takashi HONDA Seigo TARUCHA David Guy AUSTING
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/01/25 Vol. E81-C No. 1 ; pp. 2-7 Type of Manuscript: Special Section PAPER (Special Issue on Technology Challenges for Single Electron Devices) Category: Keyword: single electron tunneling, Coulomb oscillation, transistor, Coulomb blockade, resonant tunneling,
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Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device Minoru FUJISHIMA Hironobu FUKUI Shuhei AMAKAWA Koichiro HOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/07/25 Vol. E80-C No. 7 ; pp. 881-885 Type of Manuscript: Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs) Category: Quantum Devices Keyword: short channel device, single electron, Coulomb blockade,
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Coulomb Blockade Effects in Edge Quantum Wire SOI-MOSFETs Akiko OHATA Akira TORIUMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/11/25 Vol. E79-C No. 11 ; pp. 1586-1589 Type of Manuscript: Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies) Category: Keyword: Si-MOSFET, Coulomb blockade, single electron tunneling, edge quantum wire,
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Si Single-Electron Transistors on SIMOX Substrates Yasuo TAKAHASHI Akira FUJIWARA Masao NAGASE Hideo NAMATSU Kenji KURIHARA Kazumi IWADATE Katsumi MURASE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/11/25 Vol. E79-C No. 11 ; pp. 1503-1508 Type of Manuscript: INVITED PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies) Category: Keyword: single-electron, Coulomb blockade, tunneling, pattern fluctuation,
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