Keyword : CaF2


RF Performance of Diamond Surface-Channel Field-Effect Transistors
Hitoshi UMEZAWA Shingo MIYAMOTO Hiroki MATSUDAIRA Hiroaki ISHIZAKA Kwang-Soup SONG Minoru TACHIKI Hiroshi KAWARADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1949-1954
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
diamondhydrogen-terminated surface channelMESFETMISFETcut-off frequencymobilityCaF2
 Summary | Full Text:PDF(730.1KB)

Different Characteristics of Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer
Takashi SUEMASU Yoshifumi KOHNO Nobuhiro SUZUKI Masahiro WATANABE Masahiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1450-1454
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
resonant tunneling transistormetal-insulator heterostructureCaF2CoSi2transfer efficiency
 Summary | Full Text:PDF(554.8KB)