Keyword : AlN


Simulation of Temperature Distribution under Periodic Heating for Analysis of Thermal Diffusivity in Nanometer-Scale Thermoelectric Materials
Naomi YAMASHITA Yuya OTA Faiz SALLEH Mani NAVANEETHAN Masaru SHIMOMURA Kenji MURAKAMI Hiroya IKEDA 
Publication:   
Publication Date: 2018/05/01
Vol. E101-C  No. 5 ; pp. 347-350
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
thermal diffusivityac calorimetryheat diffusion equationAlN
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Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si3N4
Sanghyun SEO Eunjung CHO Giorgi AROSHVILI Chong JIN Dimitris PAVLIDIS Laurence CONSIDINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1245-1250
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlNAlN/GaN MISFETAlN/GaN HFETwide-bandgapfrequency-dispersion
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AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate
Sanghyun SEO Kaustav GHOSE Guang Yuan ZHAO Dimitris PAVLIDIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 994-1000
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
AlNMISFETsHFETsDrift-diffusion simulations
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High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates
Masahiro SAKAI Kenta ASANO Subramaniam ARULKUMARAN Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO Tomohiko SHIBATA Mitsuhiro TANAKA Osamu ODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2071-2076
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaNHEMTAlNtemplate
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