Keyword : AlInN


Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
Masanobu HIROKI Narihiko MAEDA Naoteru SHIGEKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 579-584
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
GaN-based FETsHEMTsInAlNAlInNAlGaN
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