Keyword : AlGaN


Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
Masanobu HIROKI Narihiko MAEDA Naoteru SHIGEKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 579-584
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
GaN-based FETsHEMTsInAlNAlInNAlGaN
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Hot-Electron Transport and Noise in GaN Two-Dimensional Channels for HEMTs
Arvydas MATULIONIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 913-920
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: 
Keyword: 
GaNAlGaNhigh-electron-mobility transistor (HEMT)two-dimensional electron gas (2DEG)microwave frequency
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A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET
Daigo KIKUTA Jin-Ping AO Junya MATSUDA Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1031-1036
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
HFETGaNAlGaNMISinsulatorenhancement
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Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure
Seikoh YOSHIDA Nariaki IKEDA Jiang LI Takahiro WADA Hironari TAKEHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 690-693
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Power Devices
Keyword: 
GaNAlGaNSchottkySBDon-voltage
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Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al2O3 Insulated Gate
Shinya OOTOMO Hideki HASEGAWA Tamotsu HASHIZUME 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2043-2050
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
GaNAlGaNleakage currentsurface statespassivation
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Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors
Hiroyasu ISHIKAWA Naoyuki NAKADA Masaharu NAKAJI Guang-Yuan ZHAO Takashi EGAWA Takashi JIMBO Masayoshi UMENO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C  No. 4 ; pp. 591-597
Type of Manuscript:  Special Section PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
light emitting diode (LED)distributed Bragg reflector (DBR)GaNAlGaNGaInN
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