Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C
No. 7 ;
pp. 1052-1056
Type of Manuscript:
Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword:
AlGaN/GaN-HEMTs, current collapse, Si3N4 passivation film, NH3-plasma pretreatment, |