Keyword : AlGaN/GaN


High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
Masayuki ABE Noriaki KOGUSHI Kian Siong ANG René HOFSTETTER Kumar MANOJ Louis Nicholas RETNAM Hong WANG Geok Ing NG Chon JIN Dimitris PAVLIDIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1354-1362
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
Seebeck effectheterostructure-thermopileAlGaAs/InGaAsAlGaN/GaNHEMTFPAinfrared image sensor
 Summary | Full Text:PDF(3.9MB)

Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
Masayuki ABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1302-1308
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: III-V Heterostructure Devices
Keyword: 
Seebeck effectheterostructure thermopileinfrared image sensorAlGaAs/InGaAsAlGaN/GaNZnMgO/ZnO
 Summary | Full Text:PDF(525.2KB)

Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
Masafumi ITO Shigeru KISHIMOTO Fumihiko NAKAMURA Takashi MIZUTANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 989-993
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
normally-offAlGaN/GaNHEMTInGaN cap
 Summary | Full Text:PDF(816.9KB)

Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
Jin-Ping AO Yuya YAMAOKA Masaya OKADA Cheng-Yu HU Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1004-1008
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
AlGaN/GaNheterojunction field-effect transistorcurrent collapsegate bias stress
 Summary | Full Text:PDF(505KB)

Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage
Yong CAI Yugang ZHOU Kei May LAU Kevin J. CHEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1025-1030
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
enhancement modeAlGaN/GaNHEMTfluorideplasma treatmentthreshold voltage
 Summary | Full Text:PDF(564.1KB)

Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE
Makoto MIYOSHI Masahiro SAKAI Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO Mitsuhiro TANAKA Osamu ODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2077-2081
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaNheterostructureMOVPEuniformitybowing
 Summary | Full Text:PDF(970.5KB)

A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si
Guangyuan ZHAO William SUTTON Dimitris PAVLIDIS Edwin L. PINER Johannes SCHWANK Seth HUBBARD 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2027-2031
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaNgas sensorSchottky diodesensitivity
 Summary | Full Text:PDF(599.2KB)

High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors
Jin-Ping AO Daigo KIKUTA Naotaka KUBOTA Yoshiki NAOI Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2051-2057
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
Cu-gateAlGaN/GaNhigh electron mobility transistorgate leakage currenthigh-temperature stability
 Summary | Full Text:PDF(859KB)

High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates
Masahiro SAKAI Kenta ASANO Subramaniam ARULKUMARAN Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO Tomohiko SHIBATA Mitsuhiro TANAKA Osamu ODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2071-2076
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaNHEMTAlNtemplate
 Summary | Full Text:PDF(690.5KB)

RF Characterisation and Transient Behaviour of AlGaN/GaN Power HFETs
Helmut LEIER Andrei VESCAN Ron DIETRICH Andreas WIESZT Hardy Hans SLEDZIK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1442-1447
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword: 
AlGaN/GaNHFETHEMTmicrowave power
 Summary | Full Text:PDF(662.6KB)