IEICE Trans

Keyword : AlGaN/GaN

High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application Masayuki ABE Noriaki KOGUSHI Kian Siong ANG René HOFSTETTER Kumar MANOJ Louis Nicholas RETNAM Hong WANG Geok Ing NG Chon JIN Dimitris PAVLIDIS
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/08/01 Vol. E95-C No. 8 ; pp. 1354-1362 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011) Category: GaN-based Devices Keyword: Seebeck effect, heterostructure-thermopile, AlGaAs/InGaAs, AlGaN/GaN, HEMT, FPA, infrared image sensor,
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Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application Masayuki ABE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/08/01 Vol. E93-C No. 8 ; pp. 1302-1308 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009) Category: III-V Heterostructure Devices Keyword: Seebeck effect, heterostructure thermopile, infrared image sensor, AlGaAs/InGaAs, AlGaN/GaN, ZnMgO/ZnO,
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Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer Masafumi ITO Shigeru KISHIMOTO Fumihiko NAKAMURA Takashi MIZUTANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-C No. 7 ; pp. 989-993 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Nitride-based Devices Keyword: normally-off, AlGaN/GaN, HEMT, InGaN cap,
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Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress Jin-Ping AO Yuya YAMAOKA Masaya OKADA Cheng-Yu HU Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-C No. 7 ; pp. 1004-1008 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Nitride-based Devices Keyword: AlGaN/GaN, heterojunction field-effect transistor, current collapse, gate bias stress,
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Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage Yong CAI Yugang ZHOU Kei May LAU Kevin J. CHEN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 ; pp. 1025-1030 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: GaN-Based Devices Keyword: enhancement mode, AlGaN/GaN, HEMT, fluoride, plasma treatment, threshold voltage,
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Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE Makoto MIYOSHI Masahiro SAKAI Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO Mitsuhiro TANAKA Osamu ODA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 2077-2081 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: AlGaN/GaN, heterostructure, MOVPE, uniformity, bowing,
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A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si Guangyuan ZHAO William SUTTON Dimitris PAVLIDIS Edwin L. PINER Johannes SCHWANK Seth HUBBARD
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 2027-2031 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: AlGaN/GaN, gas sensor, Schottky diode, sensitivity,
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High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors Jin-Ping AO Daigo KIKUTA Naotaka KUBOTA Yoshiki NAOI Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 2051-2057 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: Cu-gate, AlGaN/GaN, high electron mobility transistor, gate leakage current, high-temperature stability,
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High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates Masahiro SAKAI Kenta ASANO Subramaniam ARULKUMARAN Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO Tomohiko SHIBATA Mitsuhiro TANAKA Osamu ODA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 2071-2076 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: AlGaN/GaN, HEMT, AlN, template,
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RF Characterisation and Transient Behaviour of AlGaN/GaN Power HFETs Helmut LEIER Andrei VESCAN Ron DIETRICH Andreas WIESZT Hardy Hans SLEDZIK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 ; pp. 1442-1447 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Novel Electron Devices Keyword: AlGaN/GaN, HFET, HEMT, microwave power,
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