Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-CNo. 7 ;
pp. 989-993 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Nitride-based Devices Keyword: normally-off, AlGaN/GaN, HEMT, InGaN cap,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-CNo. 7 ;
pp. 1004-1008 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Nitride-based Devices Keyword: AlGaN/GaN, heterojunction field-effect transistor, current collapse, gate bias stress,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-CNo. 7 ;
pp. 1025-1030 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: GaN-Based Devices Keyword: enhancement mode, AlGaN/GaN, HEMT, fluoride, plasma treatment, threshold voltage,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-CNo. 10 ;
pp. 2077-2081 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: AlGaN/GaN, heterostructure, MOVPE, uniformity, bowing,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-CNo. 10 ;
pp. 2027-2031 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: AlGaN/GaN, gas sensor, Schottky diode, sensitivity,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-CNo. 10 ;
pp. 2071-2076 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: AlGaN/GaN, HEMT, AlN, template,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-CNo. 10 ;
pp. 1442-1447 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Novel Electron Devices Keyword: AlGaN/GaN, HFET, HEMT, microwave power,