Keyword : AlGaN/GaN HEMT


Low Leakage Current ITO Schottky Electrodes for AlGaN/GaN HEMTs
Keita MATSUDA Takeshi KAWASAKI Ken NAKATA Takeshi IGARASHI Seiji YAEGASSI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1015-1019
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaN Process Technology
Keyword: 
ITOSchottky gatetunnelAlGaN/GaN HEMTgate leakage current
 Summary | Full Text:PDF(511KB)

Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT
Yoshikazu HIROSE Akira HONSHIO Takeshi KAWASHIMA Motoaki IWAYA Satoshi KAMIYAMA Michinobu TSUDA Hiroshi AMANO Isamu AKASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1064-1067
Type of Manuscript:  Special Section LETTER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
AlGaN/GaN HEMTcontact resistancetransconductance
 Summary | Full Text:PDF(459.4KB)

Two-Dimensional Device Simulation of 0.05 µm-Gate AlGaN/GaN HEMT
Yoshifumi KAWAKAMI Naohiro KUZE Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2039-2042
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaN HEMTdevice simulationcut-off frequencydrain breakdown voltageimpact ionization
 Summary | Full Text:PDF(500.7KB)

AlGaN/GaN HEMT X-Band Frequency Doublers with Novel Fundamental Frequency Reflector Scheme
Younkyu CHUNG Kevin M.K.H. LEONG Tatsuo ITOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/08/01
Vol. E86-C  No. 8 ; pp. 1416-1421
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: 
Keyword: 
frequency doublerAlGaN/GaN HEMTactive integrated antennaconversion gain
 Summary | Full Text:PDF(955.5KB)