Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-CNo. 7 ;
pp. 1015-1019 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: GaN Process Technology Keyword: ITO, Schottky gate, tunnel, AlGaN/GaN HEMT, gate leakage current,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-CNo. 7 ;
pp. 1064-1067 Type of Manuscript: Special Section LETTER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: GaN-Based Devices Keyword: AlGaN/GaN HEMT, contact resistance, transconductance,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/08/01 Vol. E86-CNo. 8 ;
pp. 1416-1421 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology) Category: Keyword: frequency doubler, AlGaN/GaN HEMT, active integrated antenna, conversion gain,
