Keyword : ALD

Room-Temperature Atomic Layer Deposition of SnO2 Using Tetramethyltin and Its Application to TFT Fabrication
Kentaro TOKORO Shunsuke SAITO Kensaku KANOMATA Masanori MIURA Bashir AHMMAD Shigeru KUBOTA Fumihiko HIROSE 
Publication:   
Publication Date: 2018/05/01
Vol. E101-C  No. 5 ; pp. 317-322
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
ALD, SnO2, IR absorption spectroscopy, TFT, 
 Summary | Full Text:PDF(1.2MB)
Characterization of HfO2 Films Prepared on Various Surfaces for Gate Dielectrics
Takashi YAMAMOTO Yukiko IZUMI Naoyuki SUGIYAMA Kazuhiro YOSHIKAWA Hideki HASHIMOTO Yoshihiro SUGITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1 ; pp. 17-23
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κ gate dielectrics, HfO2, ALD, TEM, SIMS, XPS, FT-IR ATR, EXAFS, 
 Summary | Full Text:PDF(2.3MB)