Keyword : 8T SRAM cell


A 10T Non-precharge Two-Port SRAM Reducing Readout Power for Video Processing
Hiroki NOGUCHI Yusuke IGUCHI Hidehiro FUJIWARA Shunsuke OKUMURA Yasuhiro MORITA Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/04/01
Vol. E91-C  No. 4 ; pp. 543-552
Type of Manuscript:  Special Section PAPER (Special Section on Advanced Technologies in Digital LSIs and Memories)
Category: 
Keyword: 
8T SRAM cell10T SRAM celllow-power SRAMnon-precharge SRAMtwo-port SRAMvideo processing
 Summary | Full Text:PDF

Area Comparison between 6T and 8T SRAM Cells in Dual-Vdd Scheme and DVS Scheme
Yasuhiro MORITA Hidehiro FUJIWARA Hiroki NOGUCHI Yusuke IGUCHI Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2007/12/01
Vol. E90-A  No. 12 ; pp. 2695-2702
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Memory Design and Test
Keyword: 
6T SRAM cell8T SRAM cellVth variation
 Summary | Full Text:PDF

Area Optimization in 6T and 8T SRAM Cells Considering Vth Variation in Future Processes
Yasuhiro MORITA Hidehiro FUJIWARA Hiroki NOGUCHI Yusuke IGUCHI Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/10/01
Vol. E90-C  No. 10 ; pp. 1949-1956
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Technology toward Frontiers of New Market)
Category: Next-Generation Memory for SoC
Keyword: 
6T SRAM cell8T SRAM cellVth variation
 Summary | Full Text:PDF