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Keyword : 8T SRAM cell

A 10T Non-precharge Two-Port SRAM Reducing Readout Power for Video Processing Hiroki NOGUCHI Yusuke IGUCHI Hidehiro FUJIWARA Shunsuke OKUMURA Yasuhiro MORITA Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/04/01 Vol. E91-C No. 4 ; pp. 543-552 Type of Manuscript: Special Section PAPER (Special Section on Advanced Technologies in Digital LSIs and Memories) Category: Keyword: 8T SRAM cell, 10T SRAM cell, low-power SRAM, non-precharge SRAM, two-port SRAM, video processing,
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Area Comparison between 6T and 8T SRAM Cells in Dual-V_dd Scheme and DVS Scheme Yasuhiro MORITA Hidehiro FUJIWARA Hiroki NOGUCHI Yusuke IGUCHI Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2007/12/01 Vol. E90-A No. 12 ; pp. 2695-2702 Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms) Category: Memory Design and Test Keyword: 6T SRAM cell, 8T SRAM cell, V_th variation,
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Area Optimization in 6T and 8T SRAM Cells Considering V_th Variation in Future Processes Yasuhiro MORITA Hidehiro FUJIWARA Hiroki NOGUCHI Yusuke IGUCHI Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/10/01 Vol. E90-C No. 10 ; pp. 1949-1956 Type of Manuscript: Special Section PAPER (Special Section on VLSI Technology toward Frontiers of New Market) Category: Next-Generation Memory for SoC Keyword: 6T SRAM cell, 8T SRAM cell, V_th variation,
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