Keyword : 1/f noise


Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering
Dae-Hee HAN Shun-ichiro OHMI Tomoyuki SUWA Philippe GAUBERT Tadahiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5 ; pp. 413-418
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si surface roughnessHfON gate insulatorECR plasma sputteringplasma oxidation1/f noiseTDDB
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Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs
Jae-Hyung JANG Hyuk-Min KWON Ho-Young KWAK Sung-Kyu KWON Seon-Man HWANG Jong-Kwan SHIN Seung-Yong SUNG Yi-Sun CHUNG Da-Soon LEE Hi-Deok LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 624-629
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
fluorineflicker noise1/f noisereliabilityhot-carrierNBTIMOSFET
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Evolution of Cellular Automata toward a LIFE-Like Rule Guided by 1/f Noise
Shigeru NINAGAWA 
Publication:   IEICE TRANSACTIONS on Information and Systems
Publication Date: 2010/06/01
Vol. E93-D  No. 6 ; pp. 1489-1496
Type of Manuscript:  PAPER
Category: Fundamentals of Information Systems
Keyword: 
cellular automatongenetic algorithmcomputational universality1/f noise
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Poly(3,4-Ethylenedioxythiophene): Poly(Styrenesulfonate) (PEDOT:PSS) Films for the Microbolometer Applications
Hyeok Jun SON Il Woong KWON Yong Soo LEE Hee Chul LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5 ; pp. 702-707
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)- (PEDOT:PSS)bolometerTCR1/f noisefigure of merit
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1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation
Shizunori MATSUMOTO Hiroaki UENO Satoshi HOSOKAWA Toshihiko KITAMURA Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Tatsuya OHGURO Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/02/01
Vol. E88-C  No. 2 ; pp. 247-254
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
100 nm-MOSFET1/f noisemeasurementmodeling
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Determination of Base and Emitter Resistances in Bipolar Junction Transistors from Low Frequency Noise and Static Measurements
Pierre LLINARES Gerard GHIBAUDO Yannick MOURIER Nicolas GAMBETTA Michel LAURENS Jan A. CHROBOCZEK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/04/25
Vol. E82-C  No. 4 ; pp. 607-611
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
bipolar junction transistorbase resistanceemitter resistance1/f noise
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A Digital 1/f Noise Generator Utilizing Probabilistic Cellular Automata
Mitsuhiro YAMADA Masahiro AGU 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1998/07/25
Vol. E81-A  No. 7 ; pp. 1512-1520
Type of Manuscript:  PAPER
Category: Modeling and Simulation
Keyword: 
1/f noisenoise generatorcellular automatadigital circuitself-organized criticality
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Bi-MOSFET Amplifier for Integration with Multimicroelectrode Array for Extracellular Neuronal Recording
Kohro TAKAHASHI Satoshi TAKEUCHI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1994/02/25
Vol. E77-A  No. 2 ; pp. 388-393
Type of Manuscript:  Special Section PAPER (Special Section on High-Performance MOS Analog Circuits)
Category: 
Keyword: 
MOSFET1/f noisemicroelectrodeextracellular recordinglow noise amplifier
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Large-Signal Parameter Modeling for AlGaAs/GaAs HBT and Its Application to a Monolithic 22 GHz-Band Oscillator
Nobuyuki HAYAMA Jun-ichi SHIMIZU Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/06/25
Vol. E75-C  No. 6 ; pp. 683-688
Type of Manuscript:  Special Section PAPER (Special Issue on MMIC Technology)
Category: 
Keyword: 
HBToscillator1/f noisephase noise
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