Keyword : 1 Gbit


Trends in Capacitor Dielectrics for DRAMs
Akihiko ISHITANI Pierre-Yves LESAICHERRE Satoshi KAMIYAMA Koichi ANDO Hirohito WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/11/25
Vol. E76-C  No. 11 ; pp. 1564-1581
Type of Manuscript:  INVITED PAPER (Special Issue on LSI Memories)
Category: 
Keyword: 
capacitordielectricsSi3N4Ta2O5high permittivity materials256 Mbit1 GbitDRAM
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