Keyword : fT

The Effect of Device Layout Schemes on RF Performance of Multi-Finger MOSFETs
Yongho OH Jae-Sung RIEH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 785-791
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
fTfmaxgate resistancelayoutRF MOSFET
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7-Mask Self-Aligned SiGe Base Bipolar Transistors with fT of 80 GHz
Tsutomu TASHIRO Takasuke HASHIMOTO Fumihiko SATO Yoshihiro HAYASHI Toru TATSUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/05/25
Vol. E80-C  No. 5 ; pp. 707-713
Type of Manuscript:  PAPER
Category: Integrated Electronics
bipolar transistorsilicon-germanium baseselective epitaxial growthCMPtrench isolationfT
 Summary | Full Text:PDF