Keyword : VT-VSUB

Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
Cheng-Yu HU Katsutoshi NAKATANI Hiroji KAWAI Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1234-1237
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
AlGaN/GaN HFETVT-VSUBsubstrate biasp-GaNSIMS
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