Keyword : “read” margin


A Large “Read” and “Write” Margins, Low Leakage Power, Six-Transistor 90-nm CMOS SRAM
Tadayoshi ENOMOTO Nobuaki KOBAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/04/01
Vol. E94-C  No. 4 ; pp. 530-538
Type of Manuscript:  Special Section PAPER (Special Section on Circuits and Design Techniques for Advanced Large Scale Integration)
Category: 
Keyword: 
SRAMleakage power“write” margin“read” margin
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