IEICE TRANSACTIONS on Electronics

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Online ISSN : 1745-1353
Volume E103-C No.4  (Publication Date:2020/04/01)
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Special Section on Solid-State Circuit Design — Architecture, Circuit, Device and Design Methodology

pp.131-131  FOREWORD  Open Access Paper
FOREWORD
Makoto NAGATA  
Summary | FreeFull Text:PDF(78.5KB)

pp.132-143  INVITED PAPER-Integrated Electronics  Open Access Paper
Essential Roles, Challenges and Development of Embedded MCU Micro-Systems to Innovate Edge Computing for the IoT/AI Age
Takashi KONO  Yasuhiko TAITO  Hideto HIDAKA  
Summary | FreeFull Text:PDF(3.3MB)

pp.144-152  PAPER-Electronic Circuits
Evaluation of Heavy-Ion-Induced Single Event Upset Cross Sections of a 65-nm Thin BOX FD-SOI Flip-Flops Composed of Stacked Inverters
Kentaro KOJIMA  Kodai YAMADA  Jun FURUTA  Kazutoshi KOBAYASHI  
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pp.153-160  PAPER-Microwaves, Millimeter-Waves
A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS
Cuilin CHEN  Tsuyoshi SUGIURA  Toshihiko YOSHIMASU  
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pp.161-170  PAPER-Integrated Electronics
System Performance Comparison of 3D Charge-Trap TLC NAND Flash and 2D Floating-Gate MLC NAND Flash Based SSDs
Mamoru FUKUCHI  Chihiro MATSUI  Ken TAKEUCHI  
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pp.171-180  PAPER-Integrated Electronics
Analysis on Hybrid SSD Configuration with Emerging Non-Volatile Memories Including Quadruple-Level Cell (QLC) NAND Flash Memory and Various Types of Storage Class Memories (SCMs)
Yoshiki TAKAI  Mamoru FUKUCHI  Chihiro MATSUI  Reika KINOSHITA  Ken TAKEUCHI  
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pp.181-185  BRIEF PAPER-Integrated Electronics
Energy Minimization of Double Modular Redundant Conditional Processing by Common Condition Dependency
Kazuhito ITO  
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Regular Section

pp.186-190  PAPER-Semiconductor Materials and Devices  Open Access Paper
Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si
Taketoshi TANAKA  Norikazu ITO  Shinya TAKADO  Masaaki KUZUHARA  Ken NAKAHARA  
Summary | FreeFull Text:PDF(772.6KB)

pp.191-193  BRIEF PAPER-Semiconductor Materials and Devices
Silicon Controlled Rectifier Based Partially Depleted SOI ESD Protection Device for High Voltage Application
Yibo JIANG  Hui BI  Hui LI  Zhihao XU  Cheng SHI  
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pp.194-196  BRIEF PAPER-Semiconductor Materials and Devices
Latch-Up Immune Bi-Direction ESD Protection Clamp for Push-Pull RF Power Amplifier
Yibo JIANG  Hui BI  Wei ZHAO  Chen SHI  Xiaolei WANG  
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