Online ISSN : 1745-1353

IEICE TRANSACTIONS on Electronics
0.48 1.3
Volume E89-C No.7  (Publication Date:2006/07/01)
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Special Section on Heterostructure Microelectronics with TWHM2005

pp.873-873  FOREWORD
FOREWORD
Takatomo ENOKI  
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pp.874-882  INVITED PAPER
Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress
Hideki HASEGAWA  Seiya KASAI  Taketomo SATO  Tamotsu HASHIZUME  
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pp.883-890  INVITED PAPER
InP DHBT Integrated Circuits for Fiber-Optic High-Speed Applications
Jean GODIN  Agnieszka KONCZYKOWSKA  Muriel RIET  Jacques MOULU  Philippe BERDAGUER  Filipe JORGE  
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pp.891-897  INVITED PAPER
Novel Devices for (Sub)millimeter-Wave Space Applications
Jan V. GRAHN  Piotr STARSKI  Jan STAKE  T. Sergey CHEREDNICHENKO  
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pp.898-905  INVITED PAPER
RF MEMS--Enabling Technology for Millimeter-Waves
Youngwoo KWON  Sanghyo LEE  
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pp.906-912  INVITED PAPER
Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy
Andrea CORRION  Christiane POBLENZ  Patrick WALTEREIT  Tomas PALACIOS  Siddharth RAJAN  Umesh K. MISHRA  Jim S. SPECK  
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pp.913-920  INVITED PAPER
Hot-Electron Transport and Noise in GaN Two-Dimensional Channels for HEMTs
Arvydas MATULIONIS  
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pp.921-925  INVITED PAPER
Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si0.7Ge0.3 Virtual Substrates
Mathieu STOFFEL  Jing ZHANG  Oliver G. SCHMIDT  
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pp.926-930  INVITED PAPER
Terahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors
Wojciech KNAP  Jerzy USAKOWSKI  Frederic TEPPE  Nina DYAKONOVA  Abdelouahad El FATIMY  
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pp.931-936  PAPER-High-Speed HBTs and ICs
InP DHBT Based IC Technology for over 80 Gbit/s Data Communications
Rachid DRIAD  Robert E. MAKON  Karl SCHNEIDER  Ulrich NOWOTNY  Rolf AIDAM  Rudiger QUAY  Michael SCHLECHTWEG  Michael MIKULLA  Gunter WEIMANN  
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pp.937-942  PAPER-High-Speed HBTs and ICs
Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies
Masato SEKI  Ryo ISHIKAWA  Kazuhiko HONJO  
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pp.943-948  PAPER-High-Speed HBTs and ICs
Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation
Kazuhiro MOCHIZUKI  Ken-ichi TANAKA  Takashi SHIOTA  Takafumi TANIGUCHI  Hiroyuki UCHIYAMA  
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pp.949-953  PAPER-Millimeter-Wave Devices
Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs
Hideaki MATSUZAKI  Takashi MARUYAMA  Takatomo ENOKI  Masami TOKUMITSU  
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pp.954-958  PAPER-Millimeter-Wave Devices
W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs
Koji INAFUNE  Eiichi SANO  Hideaki MATSUZAKI  Toshihiko KOSUGI  Takatomo ENOKI  
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pp.959-964  PAPER-Millimeter-Wave Devices
HEMT CCD Matched Filter for Spread Spectrum Communication
Takahiro SUGIYAMA  Eiji NISHIMORI  Satoru ONO  Kiyoshi KAWAGUCHI  Atsushi NAKAGAWA  
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pp.965-971  PAPER-THz Devices
Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes
Masahiro ASADA  Naoyuki ORIHASHI  Safumi SUZUKI  
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pp.972-978  PAPER-THz Devices
Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer
Yasuyuki MIYAMOTO  Ryo NAKAGAWA  Issei KASHIMA  Masashi ISHIDA  Nobuya MACHIDA  Kazuhito FURUYA  
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pp.979-984  PAPER-THz Devices
A Design of Continuous-Time Delta-Sigma Modulators Using a Fully-Differential Resonant-Tunneling Comparator
Keisuke EGUCHI  Masaru CHIBASHI  Shinpei NAKAGAWA  Mitsuhiro TANIHATA  Takao WAHO  
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pp.985-992  PAPER-THz Devices
Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer
Mitsuhiro HANABE  Takuya NISHIMURA  Masaki MIYAMOTO  Taiichi OTSUJI  Eiichi SANO  
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pp.993-998  PAPER-THz Devices
Non Resonant Response to Terahertz Radiation by Submicron CMOS Transistors
Yahya Moubarak MEZIANI  Jerzy USAKOWSKI  Nina DYAKONOVA  Wojciech KNAP  Dalius SELIUTA  Edmundas SIRMULIS  Jan DEVENSON  Gintaras VALUSIS  Frederic BOEUF  Thomas SKOTNICKI  
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pp.999-1004  PAPER-THz Devices
Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation
Youhei OOKAWA  Shigeru KISHIMOTO  Koichi MAEZAWA  Takashi MIZUTANI  
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pp.1005-1011  PAPER-THz Devices
Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer
Takuya NISHIMURA  Mitsuhiro HANABE  Masaki MIYAMOTO  Taiichi OTSUJI  Eiichi SANO  
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pp.1012-1019  PAPER-THz Devices
Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect
Victor RYZHII  Akira SATOU  Michael S. SHUR  
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pp.1020-1024  PAPER-THz Devices
Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities
Hideki ONO  Satoshi TANIGUCHI  Toshi-kazu SUZUKI  
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pp.1025-1030  PAPER-GaN-Based Devices
Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage
Yong CAI  Yugang ZHOU  Kei May LAU  Kevin J. CHEN  
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pp.1031-1036  PAPER-GaN-Based Devices
A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET
Daigo KIKUTA  Jin-Ping AO  Junya MATSUDA  Yasuo OHNO  
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pp.1037-1041  PAPER-GaN-Based Devices
Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications
Oktay YILMAZOGLU  Kabula MUTAMBA  Dimitris PAVLIDIS  Marie Rose MBARGA  
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pp.1042-1046  PAPER-GaN-Based Devices
Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage
Masaya OKADA  Ryohei TAKAKI  Daigo KIKUTA  Jin-Ping AO  Yasuo OHNO  
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pp.1047-1051  PAPER-GaN-Based Devices
Improvement of CO Sensitivity in GaN-Based Gas Sensors
Eunjung CHO  Dimitris PAVLIDIS  Guangyuan ZHAO  Seth M. HUBBARD  Johannes SCHWANK  
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pp.1052-1056  PAPER-GaN-Based Devices
Influence of NH3-Plasma Pretreatment before Si3N4 Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs
Shinichi HOSHI  Toshiharu MARUI  Masanori ITOH  Yoshiaki SANO  Shouhei SEKI  
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pp.1057-1063  PAPER-GaN-Based Devices
Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation
Masayuki ABE  Hiroyuki NAGASAWA  Stefan POTTHAST  Jara FERNANDEZ  Jorg SCHORMANN  Donat Josef AS  Klaus LISCHKA  
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pp.1064-1067  LETTER-GaN-Based Devices
Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT
Yoshikazu HIROSE  Akira HONSHIO  Takeshi KAWASHIMA  Motoaki IWAYA  Satoshi KAMIYAMA  Michinobu TSUDA  Hiroshi AMANO  Isamu AKASAKI  
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Regular Section

pp.1068-1079  PAPER-Lasers, Quantum Electronics
Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches by Selective Area MOVPE
Xueliang SONG  Naoki FUTAKUCHI  Daisuke MIYASHITA  Foo Cheong YIT  Yoshiaki NAKANO  
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pp.1080-1088  PAPER-Microwaves, Millimeter-Waves
A Single-Layer Hollow-Waveguide 8-Way Butler Matrix
Shin-ichi YAMAMOTO  Jiro HIROKAWA  Makoto ANDO  
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pp.1089-1096  PAPER-Electronic Circuits
A Very Low Power 10 MHz CMOS Continuous-Time Bandpass Filter with On-Chip Automatic Tuning
Gholamreza Zareh FATIN  Mohammad GHADAMI  
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pp.1097-1105  PAPER-Integrated Electronics
Fast and Accurate Power Bus Designer for Multi-Layers High-Speed Digital Boards
Yong-Ju KIM  Won-Young JUNG  Jae-Kyung WEE  
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pp.1106-1107  LETTER-Lasers, Quantum Electronics
Self-Starting Pulse Generation from Cooled Erbium-Doped Fiber Ring Laser
Kazuhiko SUMIMURA  Hidetsugu YOSHIDA  Hisanori FUJITA  Masahiro NAKATSUKA  Minoru YOSHIDA  
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pp.1108-1111  LETTER-Lasers, Quantum Electronics
Switching Characteristics of All-Optical Wavelength-Selective Switch Using Waveguide-Type Raman Amplifiers and 3-dB Couplers
Hiroki KISHIKAWA  Nobuo GOTO  
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pp.1112-1114  LETTER-Lasers, Quantum Electronics
Self-Controlled Short Pulse Generator from All-Fiber Coupled Fabry-Perot Cavity
Kazuhiko SUMIMURA  Hidetsugu YOSHIDA  Hisanori FUJITA  Masahiro NAKATSUKA  Hisashi SAWADA  
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pp.1115-1117  LETTER-Lasers, Quantum Electronics
763-nm Laser Light Source for Oxygen Monitoring Using Second Harmonic Generation in Direct-Bonded Quasi-Phase-Matched LiNbO3 Ridge Waveguide
Osamu TADANAGA  Masaki ASOBE  Yoshiki NISHIDA  Hiroshi MIYAZAWA  Kaoru YOSHINO  Hiroyuki SUZUKI  
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