IEICE Trans

IEICE TRANSACTIONS on Electronics

Volume E77-C No.3 (Publication Date:1994/03/25)

Special Issue on Quarter Micron Si Device and Process Technologies

pp.341-341 FOREWORD FOREWORD Eisuke ARAI
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pp.342-349 INVITED PAPER Thinned Silicon Layers on Oxide Film, Quartz and Sapphire by Wafer Bonding Takao ABE Yasuyuki NAKAZATO
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pp.350-354 PAPER-Device Technology LATID (Large-Angle-Tilt Implanted Drain) FETs with Buried n^- Profile for Deep-Submicron ULSIs Junji HIRASE Takashi HORI Yoshinori ODAKE
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pp.355-361 PAPER-Device Technology A 0.25-µm BiCMOS Technology Using SOR X-Ray Lithography Shinsuke KONAKA Hakaru KYURAGI Toshio KOBAYASHI Kimiyoshi DEGUCHI Eiichi YAMAMOTO Shigehisa OHKI Yousuke YAMAMOTO
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pp.362-366 PAPER-Device Technology Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD) Yukihiro KIYOTA Tohru NAKAMURA Taroh INADA
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pp.367-372 PAPER-Device Technology Hot Carrier Evaluation of TFT by Emission Microscopy Junko KOMORI Jun-ichi MITSUHASHI Shigenobu MAEDA
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pp.373-378 PAPER-Device Technology Degradation Mechanisms of Thin Film SIMOX SOI-MOSFET Characteristics--Optical and Electrical Evaluation-- Mitsuru YAMAJI Kenji TANIGUSHI Chihiro HAMAGUCHI Kazuo SUKEGAWA Seiichiro KAWAMURA
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pp.379-384 PAPER-Device Technology Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs Satoshi KAMIYAMA Hiroshi SUZUKI Pierre-Yves LESAICHERRE Akihiko ISHITANI
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pp.385-391 PAPER-Device Technology (Ba_0.75Sr_0.25)TiO₃ Films for 256 Mbit DRAM Tsuyoshi HORIKAWA Noboru MIKAMI Hiromi ITO Yoshikazu OHNO Tetsuro MAKITA Kazunao SATO
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pp.392-398 PAPER-Device Technology Application of Ferroelectric Thin Films to Si Devices Koji ARITA Eiji FUJII Yasuhiro SHIMADA Yasuhiro UEMOTO Masamichi AZUMA Shinichiro HAYASHI Toru NASU Atsuo INOUE Akihiro MATSUDA Yoshihisa NAGANO Shin-ich KATSU Tatsuo OTSUKI Gota KANO Larry D. McMILLAN Carlos A. Paz de ARAUJO
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pp.399-405 PAPER-Device Technology Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method Yoshikazu OHNO Hiroshi KIMURA Ken-ichiro SONODA Tadashi NISHIMURA Shin-ichi SATOH Hirokazu SAYAMA Shigenori HARA Mikio TAKAI Hirokazu MIYOSHI
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pp.406-415 PAPER-Device Technology Design Rule Relaxation Approach for High-Density DRAMs Takanori SAEKI Eiichiro KAKEHASHI Hidemitu MORI Hiroki KOGA Kenji NODA Mamoru FUJITA Hiroshi SUGAWARA Kyoichi NAGATA Shozo NISHIMOTO Tatsunori MUROTANI
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pp.416-424 PAPER-Process Technology New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns Masaru SASAGO Takahiro MATSUO Kazuhiro YAMASHITA Masayuki ENDO Kouji MATSUOKA Taichi KOIZUMI Akiko KATSUYAMA Noboru NOMURA
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pp.425-431 PAPER-Process Technology Optimization of Optical Parameters in KrF Excimer Laser Lithography for Quarter-Micron Lines Pattern Keiichiro TOUNAI Kunihiko KASAMA
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pp.432-437 PAPER-Process Technology High Performance Lithography with Advanced Modified Illumination Ho-Young KANG Cheol-Hong KIM Joong-Hyun LEE Woo-Sung HAN Young-Bum KOH
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pp.438-444 PAPER-Process Technology Enhancement of Defocus Characteristics with Intermediate Phase Interference in Phase Shift Method Hiroshi OHTSUKA Toshio ONODERA Kazuyuki KUWAHARA Takashi TAGUCHI
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pp.445-452 PAPER-Process Technology High Speed Electron Beam Cell Projection Exposure System Yoshihiko OKAMOTO Norio SAITOU Haruo YODA Yoshio SAKITANI
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pp.453-458 PAPER-Process Technology Evaluation of Plasma Damage to Gate Oxide Yukiharu URAOKA Koji ERIGUCHI Tokuhiko TAMAKI Kazuhiko TSUJI
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pp.459-463 PAPER-Process Technology Elimination of Negative Charge-Up during High Current Ion Implantation Kazunobu MAMENO Atsuhiro NISHIDA Hideharu NAGASAWA Hideaki FUJIWARA Koji SUZUKI Kiyoshi YONEDA
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pp.464-472 PAPER-Process Technology Influences of Magnesium and Zinc Contaminations on Dielectric Breakdown Strength of MOS Capacitors Makoto TAKIYAMA Susumu OHTSUKA Tadashi SAKON Masaharu TACHIMORI
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pp.473-479 PAPER-Process Technology Water Desorption Control of Interlayer Dielectrics to Reduce MOSFET Hot Carrier Degradation Kimiaki SHIMOKAWA Takashi USAMI Masaki YOSHIMARU
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pp.480-485 PAPER-Process Technology Ti Salicide Process for Subquarter-Micron CMOS Devices Ken-ichi GOTO Tatsuya YAMAZAKI Yasuo NARA Tetsu FUKANO Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO
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pp.486-491 PAPER-Process Technology Identification of the Particle Source in LSI Manufacturing Process Equipment Yoshimasa TAKII Nobuo AOI Yuichi HIROFUJI
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pp.492-497 PAPER-Process Technology Removal of Particles on Si Wafers in SC-1 Solution Hiroyuki KAWAHARA Kenji YONEDA Izumi MUROZONO Yoshihiro TODOKORO
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Regular Section

pp.498-509 PAPER-Electronic Circuits Stability of an Active Two Port Network in terms of S Parameters Yoshihiro MIWA
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pp.510-514 PAPER-Opto-Electronics Modified Numerical Technique for Beam Propagation Method Based on the Galerkin's Technique Guosheng PU Tetsuya MIZUMOTO Yoshiyuki NAITO
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pp.515-518 LETTER-Integrated Electronics Temperature Adaptive Voltage Reference Network for Realizing a Transconductance with Low Temperature Sensitivity Rabin RAUT
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