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IEICE TRANSACTIONS on Electronics
0.35 1.3
Volume E75-C No.2  (Publication Date:1992/02/25)
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Special Issue on Selected Papers from '91 VPAD

pp.127-127  FOREWORD
FOREWORD
Kenji TANIGUCHI  
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pp.128-137  PAPER
Evaluation of the Point Defect Bulk Recombination Rate by Ion Implantation at High Temperatures
Peter PICHLER  Rainer SCHORK  Thomas KLAUSER  Heiner RYSSEL  
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pp.138-144  PAPER
Process Simulation for Laser Recrystallization
Bo HU  Albert SEIDL  Gertraud NEUMAYER  Reinhold BUCHNER  Karl HABERGER  
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pp.145-149  PAPER
Simulation of Stress Redistribution on LOCOS Structure during Oxidation and Subsequent Cooling Down
Shigeki KURODA  Kenji NISHI  
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pp.150-155  PAPER
Numerical Techniques on Enhancing Robustness for Stress-Dependent Oxidation Simulation Using Finite Element Method in SUPREM-IV
Yoshinori ODA  Kaung-Shia YU  Thye-Lai TUNG  Arthur RAEFSKY  Donald L. SCHARFETTER  Robert W. DUTTON  
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pp.156-160  PAPER
An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration
Naoyuki SHIGYO  Noritoshi KONISHI  Hideki SATAKE  
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pp.161-171  PAPER
Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations
Herbert S. BENNETT  Jeremiah R. LOWNEY  Masaaki TOMIZAWA  Tadao ISHIBASHI  
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pp.172-180  PAPER
Unified MOSFET Model for All Channel Lengths down to Quarter Micron
Mitiko MIURA-MATTAUSCH  Ulrich WEINERT  
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pp.181-188  PAPER
Three-Dimensional Evaluation of Substrate Current in Recessed-Oxide MOSFETs
Anna PIERANTONI  Paolo CIAMPOLINI  Antonio GNUDI  Giorgio BACCARANI  
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pp.189-193  PAPER
Hydrodynamic Modeling of Silicon BJT with Monte Carlo Calibrated Transport Coefficients
Shin-Chi LEE  Ting-Wei TANG  
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pp.194-199  PAPER
An Efficient Method for Evaluating the Energy Distribution of Electrons in Semiconductors Based on Spherical Harmonics Expansion
Davide VENTURA  Antonio GNUDI  Giorgo BACCARANI  
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pp.200-206  PAPER
Two-Dimensional Monte Carlo Simulation of Resonant-Tunneling Hot Electron Transistors (RHETs)
Hiroaki OHNISHI  
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pp.207-215  PAPER
1/5 Power Law in PN-Junction Failure Mechanism Caused by Electrical-Over-Stress
Yutaka TAJIMA  Kunihiro ASADA  Takuo SUGANO  
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pp.216-225  PAPER
Integrated Tools for Device Optimization
Massimo RUDAN  Maria Cristina VECCHI  Antonio GNUDI  
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pp.226-233  PAPER
General-Purpose Device Simulation System with an Effective Graphic Interface
Masaaki TOMIZAWA  Akira YOSHII  Shunji SEKI  
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pp.234-240  PAPER
A Unified Process and Device Simulation System--P & D Workbench--
Yukio TAMEGAYA  Hideki IKEUCHI  Hiroyoshi KUGE  Yutaka AKIYAMA  Yuukichi HATANAKA  Masao ASOU  
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Regular Section

pp.241-245  PAPER-Electronic Displays
An Analysis of the Mechanism of Monochromatisation of Ne-A-H2 Filled Plasma Display Light
Geavit MUSA  Cristian Petrica LUNGU  Alexandrina POPESCU  Alexandra BALTOG  
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pp.246-251  PAPER-Microwave and Millimeter Wave Technology
High-Temperature Superconducting Small Helical Antenna
Keiichiro ITOH  Osamu ISHII  Yasuhiro KOSHIMOTO  Keizo CHO  
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pp.252-258  PAPER-Microwave and Millimeter Wave Technology
High-Power Microwave Transmit-Receive Switch with Series and Shunt GaAs FETs
Makoto MATSUNAGA  Kazuhiko NAKAHARA  
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pp.259-266  PAPER-Electromagnetic Theory
Accurate Analysis of Various Planar Transmission Lines with Finite Metallization Thickness Using Eigen-Function Weighted Boundary Integral Equation Method
Lei ZHU  Eikichi YAMASHITA  
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