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IEICE TRANSACTIONS on Electronics
0.48 1.3
Volume E75-C No.12  (Publication Date:1992/12/25)
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Special Issue on SOI (Si on Insulator) Devices

pp.1413-1414  FOREWORD
FOREWORD
Takashi ITO  
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pp.1415-1420  PAPER-SOI Wafers
SIMOX Wafers Having Low Dislocation Density Formed with a Substoichiometric Dose of Oxygen
Sadao NAKASHIMA  Katsutoshi IZUMI  
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pp.1421-1429  PAPER-SOI Wafers
C-V Measurement and Simulation of Silicon-Insulator-Silicon (SIS) Structures for Analyzing Charges in Buried Oxides of Bonded SOI Materials
Kiyoshi MITANI  Hisham Z. MASSOUD  
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pp.1430-1437  PAPER-SOI Wafers
Characterization of the Laser-Recrystallized Single-Crystalline Si-SiO2 Interface
Nobuo SASAKI  
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pp.1438-1441  PAPER-SOI Devices
Analysis of Localized Temperature Distribution in SOI Devices
Hizuru YAMAGUCHI  Shigeki HIRASAWA  Nobuo OWADA  Nobuyoshi NATSUAKI  
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pp.1442-1446  PAPER-SOI Devices
High-Temperature Operation of nMOSFET on Bonded SOI
Yoshihiro ARIMOTO  
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pp.1447-1452  PAPER-SOI Devices
Phenomenon and Mechanism of CMOS Latch-up Induced by Substrate Voltage Fluctuation in Thick Film SOI Structure
Hitoshi YAMAGUCHI  Hiroaki HIMI  Seiji FUJINO  Tadashi HATTORI  
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pp.1453-1458  PAPER-SOI Devices
A 4 GHz Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI
Naoshi HIGAKI  Tetsu FUKANO  Atsushi FUKURODA  Toshihiro SUGII  Yoshihiro ARIMOTO  Takashi ITO  
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pp.1459-1464  PAPER-SOI Devices
Bevel Style High Voltage Power Transistor for Power IC
Kazuhiro TSURUTA  Mitsutaka KATADA  Seiji FUJINO  Tadashi HATTORI  
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pp.1465-1470  PAPER-Hot Carrier
Hot-Carrier Reliability in Submicrometer Ultra-Thin SOI-MOSFET's
Yasuo YAMAGUCHI  Masahiro SHIMIZU  Yasuo INOUE  Tadashi NISHIMURA  Katsuhiro TSUKAMOTO  
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pp.1471-1476  PAPER-Hot Carrier
Hot-Carrier-Induced Photon Emission in Thin SOI/MOSFETs
Seiichiro KAWAMURA  Takami MAKINO  Kazuo SUKEGAWA  
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pp.1477-1483  PAPER-Hot Carrier
Simulation of Velocity Overshoot and Hot Carrier Effects in Thin-Film SOI-nMOSFETs
Kazuya MATSUZAWA  Minoru TAKAHASHI  Makoto YOSHIMI  Naoyuki SHIGYO  
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pp.1484-1490  PAPER-Hot Carrier
Effects of Hot Electron Trapping in Ultra-Thin-Film SOI/SIMOX pMOSFET's
Kazuo SUKEGAWA  Seiichiro KAWAMURA  
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pp.1491-1497  PAPER-Deep Sub-micron SOI CMOS
Investigation on High-Speed Performance of 0.1-µm-Gate, Ultrathin-Film CMOS/SIMOX
Yasuhisa OMURA  Sadao NAKASHIMA  Katsutoshi IZUMI  
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pp.1498-1505  PAPER-Deep Sub-micron SOI CMOS
Two-Dimensional Device Simulation of 0.1 µm Thin-Film SOI MOSFET's
Hans-Oliver JOACHIM  Yasuo YAMAGUCHI  Kiyoshi ISHIKAWA  Norihiko KOTANI  Tadashi NISHIMURA  Katsuhiro TSUKAMOTO  
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pp.1506-1514  PAPER-Deep Sub-micron SOI CMOS
Analytical Modeling of Dynamic Performance of Deep Sub-micron SOI/SIMOX Based on Current-Delay Product
Minoru FUJISHIMA  Makoto IKEDA  Kunihiro ASADA  Yasuhisa OMURA  Katsutoshi IZUMI  
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pp.1515-1521  PAPER-SOI LSIs
Mixed-Signal IC (MSIC) for New SOI-Based Structure
Takeshi MATSUTANI  Toshiharu TAKARAMOTO  Takao MIURA  Syuichi HARAJIRI  Tsunenori YAMAUCHI  
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pp.1522-1528  PAPER-SOI LSIs
Bonded SOI with Polish-Stopper Technology for ULSI
Yoshihiro MIYAZAWA  Makoto HASHIMOTO  Naoki NAGASHIMA  Hiroshi SATO  Muneharu SHIMANOE  Katsunori SENO  Fumio MIYAJI  Takeshi MATSUSHITA  
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Regular Section

pp.1529-1535  PAPER-Opto-Electronics
Theoretical Analysis of Single Mode GaInAsP/InP Positive-Index-Guided Laser Array
Jie DONG  Jong-In SHIM  Shigehisa ARAI  Kazuhiro KOMORI  
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pp.1536-1540  PAPER-Opto-Electronics
Numerical Analysis of Stability Property of an Optically Injection-Locked Semiconductor Laser Taking Account of Gain Saturation
Koichi IIYAMA  Ken-ichi HAYASHI  Yoshio IDA  
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pp.1541-1554  PAPER-Opto-Electronics
Static Characteristics of GaInAsP/InP Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes (GRIN-SCH QW LDs) Grown by Metalorganic Chemical Vapor Deposition (MOCVD)
Akihiko KASUKAWA  Narihito MATSUMOTO  Takeshi NAMEGAYA  Yoshihiro IMAJO  
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