IEICE Trans

Online ISSN : 1745-1353

IEICE TRANSACTIONS on Electronics

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Volume E103-C No.4 (Publication Date:2020/04/01)

Special Section on Solid-State Circuit Design — Architecture, Circuit, Device and Design Methodology

pp.131-131 FOREWORD Open Access Paper FOREWORD Makoto NAGATA
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pp.132-143 INVITED PAPER-Integrated Electronics Open Access Paper Essential Roles, Challenges and Development of Embedded MCU Micro-Systems to Innovate Edge Computing for the IoT/AI Age Takashi KONO Yasuhiko TAITO Hideto HIDAKA
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pp.144-152 PAPER-Electronic Circuits Evaluation of Heavy-Ion-Induced Single Event Upset Cross Sections of a 65-nm Thin BOX FD-SOI Flip-Flops Composed of Stacked Inverters Kentaro KOJIMA Kodai YAMADA Jun FURUTA Kazutoshi KOBAYASHI
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pp.153-160 PAPER-Microwaves, Millimeter-Waves A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS Cuilin CHEN Tsuyoshi SUGIURA Toshihiko YOSHIMASU
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pp.161-170 PAPER-Integrated Electronics System Performance Comparison of 3D Charge-Trap TLC NAND Flash and 2D Floating-Gate MLC NAND Flash Based SSDs Mamoru FUKUCHI Chihiro MATSUI Ken TAKEUCHI
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pp.171-180 PAPER-Integrated Electronics Analysis on Hybrid SSD Configuration with Emerging Non-Volatile Memories Including Quadruple-Level Cell (QLC) NAND Flash Memory and Various Types of Storage Class Memories (SCMs) Yoshiki TAKAI Mamoru FUKUCHI Chihiro MATSUI Reika KINOSHITA Ken TAKEUCHI
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pp.181-185 BRIEF PAPER-Integrated Electronics Energy Minimization of Double Modular Redundant Conditional Processing by Common Condition Dependency Kazuhito ITO
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Regular Section

pp.186-190 PAPER-Semiconductor Materials and Devices Open Access Paper Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si Taketoshi TANAKA Norikazu ITO Shinya TAKADO Masaaki KUZUHARA Ken NAKAHARA
	(Publicized: 2019/10/11) Summary \| FreeFull Text:PDF(772.6KB)

pp.191-193 BRIEF PAPER-Semiconductor Materials and Devices Silicon Controlled Rectifier Based Partially Depleted SOI ESD Protection Device for High Voltage Application Yibo JIANG Hui BI Hui LI Zhihao XU Cheng SHI
	(Publicized: 2019/10/09) Summary \| Full Text:PDF (3.4MB) >> Buy this Article

pp.194-196 BRIEF PAPER-Semiconductor Materials and Devices Latch-Up Immune Bi-Direction ESD Protection Clamp for Push-Pull RF Power Amplifier Yibo JIANG Hui BI Wei ZHAO Chen SHI Xiaolei WANG
	(Publicized: 2019/10/09) Summary \| Full Text:PDF (1.2MB) >> Buy this Article