Online ISSN : 1745-1353
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IEICE TRANSACTIONS on Electronics
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Volume E96-C No.5 (Publication Date:2013/05/01)
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Special Section on Fundamentals and Applications of Advanced Semiconductor Devices |
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pp.669-673 PAPER Flattening Process of Si Surface below 1000 Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation Dae-Hee HAN Shun-ichiro OHMI
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