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IEICE TRANSACTIONS on Electronics
Volume E86-C No.3  (Publication Date:2003/03/01)
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Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02)

pp.255-255  FOREWORD
FOREWORD
Mitiko MIURA-MATTAUSCH  
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pp.256-268  INVITED PAPER
Roles of Phase Coherence in Quantum Transport
Tsuneya ANDO  
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pp.269-275  INVITED PAPER
Multiscale Simulation of Diffusion, Deactivation and Segregation of Boron in Silicon
Wolfgang WINDL  
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pp.276-283  INVITED PAPER
The Process Modeling Hierarchy: Connecting Atomistic Calculations to Nanoscale Behavior
Scott T. DUNHAM  Pavel FASTENKO  Zudian QIN  Milan DIEBEL  
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pp.284-294  INVITED PAPER
Stress Engineering in Si Based Micro Structures Using Technology Computer-Aided Design
Vincent SENEZ  Aldo ARMIGLIATO  Giovanni CARLOTTI  Gianpietro CARNEVALE  Herve JAOUEN  Ingrid De WOLF  
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pp.295-300  PAPER
Atomistic Simulation of RTA Annealing for Shallow Junction Formation Characterizing both BED and TED
Min YU  Ru HUANG  Xing ZHANG  Yangyuan WANG  Hideki OKA  
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pp.301-307  INVITED PAPER
Technology Modeling for Emerging SOI Devices
Meikei IEONG  Phil OLDIGES  
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pp.308-313  PAPER
Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation
Fabian M. BUFLER  Christoph ZECHNER  Andreas SCHENK  Wolfgang FICHTNER  
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pp.314-319  PAPER
In-Advance CPU Time Analysis for Stationary Monte Carlo Device Simulations
Christoph JUNGEMANN  Bernd MEINERZHAGEN  
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pp.320-324  PAPER
Impact of Electron Heat Conductivity on Electron Energy Flux
Kazuya MATSUZAWA  
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pp.325-329  PAPER
Analysis of Injection Current with Electron Temperature for High-K Gate Stacks
Yasuyuki OHKURA  Hiroyuki TAKASHINO  Shoji WAKAHARA  Kenji NISHI  
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pp.330-335  PAPER
Gate Tunnelling and Impact Ionisation in Sub 100 nm PHEMTs
Karol KALNA  Asen ASENOV  
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pp.336-349  INVITED PAPER
Hot Carrier Induced Degradation Due to Multi-Phonon Mechanism Analyzed by Lattice and Device Monte Carlo Coupled Simulation
Shirun HO  Yasuyuki OHKURA  Takuya MARUIZUMI  Prasad JOSHI  Naoki NAKAMURA  Shoichi KUBO  Sigeo IHARA  
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pp.350-356  PAPER
Investigation of the Electron Mobility in Strained Si1-xGex at High Ge Composition
Sergey SMIRNOV  Hans KOSINA  Siegfried SELBERHERR  
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pp.357-362  PAPER
Ensemble Monte Carlo/Molecular Dynamics Simulation of Inversion Layer Mobility in Si MOSFETs--Effects of Substrate Impurity
Yoshinari KAMAKURA  Hironori RYOUKE  Kenji TANIGUCHI  
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pp.363-371  INVITED PAPER
Quantum Electron Transport Modeling in Nano-Scale Devices
Matsuto OGAWA  Hideaki TSUCHIYA  Tanroku MIYOSHI  
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pp.372-378  INVITED PAPER
Monte Carlo Study of Electron Transport in a Carbon Nanotube
Gary PENNINGTON  Neil GOLDSMAN  
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pp.379-384  PAPER
On Density-Gradient Modeling of Tunneling through Insulators
Timm HOHR  Andreas SCHENK  Andreas WETTSTEIN  Wolfgang FICHTNER  
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pp.385-390  PAPER
Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model
Andreas SCHENK  Andreas WETTSTEIN  
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pp.391-397  PAPER
Two-Particle Wave Function of Electrons Coherently Propagating along Quantum Wires
Susanna REGGIANI  Andrea BERTONI  Massimo RUDAN  
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pp.398-403  INVITED PAPER
A Novel CDM-Like Discharge Effect during Human Body Model (HBM) ESD Stress
Valery AXELRAD  Yoon HUH  Jau-Wen CHEN  Peter BENDIX  
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pp.404-408  PAPER
Simulation Technique of Heating by Contact Resistance for ESD Protection Device
Kazuya MATSUZAWA  Hirobumi KAWASHIMA  Toyoaki MATSUHASHI  Naoyuki SHIGYO  
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pp.409-415  INVITED PAPER
Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator
Tatsuya EZAKI  Takeo IKEZAWA  Akio NOTSU  Katsuhiko TANAKA  Masami HANE  
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pp.416-420  PAPER
Statistical Threshold Voltage Fluctuation Analysis by Monte Carlo Ion Implantation Method
Yoshinori ODA  Yasuyuki OHKURA  Kaina SUZUKI  Sanae ITO  Hirotaka AMAKAWA  Kenji NISHI  
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pp.421-426  INVITED PAPER
An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration
Hajdin CERIC  Siegfried SELBERHERR  
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pp.427-432  PAPER
Three-Dimensional Triangle-Based Simulation of Etching Processes and Applications
Oliver LENHART  Eberhard BAR  
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pp.433-438  PAPER
Simulation of Substrate Currents
Wim SCHOENMAKER  Peter MEURIS  Wim MAGNUS  Bert MALESZKA  
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pp.439-446  PAPER
Realistic Scaling Scenario for Sub-100 nm Embedded SRAM Based on 3-Dimensional Interconnect Simulation
Yasumasa TSUKAMOTO  Tatsuya KUNIKIYO  Koji NII  Hiroshi MAKINO  Shuhei IWADE  Kiyoshi ISHIKAWA  Yasuo INOUE  Norihiko KOTANI  
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pp.447-452  PAPER
TCAD Driven Drain Engineering for Hot Carrier Reduction of 3.3 V I/O PMOSFET
Noriyuki MIURA  Hirotaka KOMATSUBARA  Marie MOCHIZUKI  Hirokazu HAYASHI  Koichi FUKUDA  
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pp.453-458  PAPER
A New Non-Pair Diffusion Based Dopant Pile-up Model for Process Designers and Its Prediction Accuracy
Hirokazu HAYASHI  Noriyuki MIURA  Hirotaka KOMATSUBARA  Marie MOCHIZUKI  Koichi FUKUDA  
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pp.459-465  PAPER
Automatic Generation of Compact Electro-Thermal Models for Semiconductor Devices
Tamara BECHTOLD  Evgenii B. RUDNYI  Jan G. KORVINK  
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pp.466-473  PAPER
An Investigation of Magnetic Field Effects on Energy States for Nanoscale InAs/GaAs Quantum Rings and Dots
Yiming LI  Hsiao-Mei LU  
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pp.474-480  INVITED PAPER
Circuit-Simulation Model of Cgd Changes in Small-Size MOSFETs Due to High Channel-Field Gradients
Dondee NAVARRO  Hiroaki KAWANO  Kazuya HISAMITSU  Takatoshi YAMAOKA  Masayasu TANAKA  Hiroaki UENO  Mitiko MIURA-MATTAUSCH  Hans Jurgen MATTAUSCH  Shigetaka KUMASHIRO  Tetsuya YAMAGUCHI  Kyoji YAMASHITA  Noriaki NAKAYAMA  
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Regular Section

pp.481-489  PAPER-Device Modeling and Simulation
Simulation of RF Noise in MOSFETs Using Different Transport Models
Andreas SCHENK  Bernhard SCHMITHUSEN  Andreas WETTSTEIN  Axel ERLEBACH  Simon BRUGGER  Fabian M. BUFLER  Thomas FEUDEL  Wolfgang FICHTNER  
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pp.490-495  PAPER-Optoelectronics
Analysis of Fiber Endface Shape and Processing Conditions for a Fiber Physical Contact Connector
Yoshiteru ABE  Masaru KOBAYASHI  Shuichiro ASAKAWA  Ryo NAGASE  
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pp.496-505  PAPER-Electronic Circuits
A New Dynamic D-Flip-Flop Aiming at Glitch and Charge Sharing Free
Sung-Hyun YANG  Younggap YOU  Kyoung-Rok CHO  
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pp.506-513  PAPER-Electronic Circuits
An 8b 200 MHz Time-Interleaved Subranging ADC Based on a Single-Poly Digital CMOS Process
Jung-Woong MOON  Seung-Hoon LEE  
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