IEICE Trans

IEICE TRANSACTIONS on Electronics

Volume E86-C No.3 (Publication Date:2003/03/01)

Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02)

pp.255-255 FOREWORD FOREWORD Mitiko MIURA-MATTAUSCH
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pp.256-268 INVITED PAPER Roles of Phase Coherence in Quantum Transport Tsuneya ANDO
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pp.269-275 INVITED PAPER Multiscale Simulation of Diffusion, Deactivation and Segregation of Boron in Silicon Wolfgang WINDL
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pp.276-283 INVITED PAPER The Process Modeling Hierarchy: Connecting Atomistic Calculations to Nanoscale Behavior Scott T. DUNHAM Pavel FASTENKO Zudian QIN Milan DIEBEL
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pp.284-294 INVITED PAPER Stress Engineering in Si Based Micro Structures Using Technology Computer-Aided Design Vincent SENEZ Aldo ARMIGLIATO Giovanni CARLOTTI Gianpietro CARNEVALE Herve JAOUEN Ingrid De WOLF
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pp.295-300 PAPER Atomistic Simulation of RTA Annealing for Shallow Junction Formation Characterizing both BED and TED Min YU Ru HUANG Xing ZHANG Yangyuan WANG Hideki OKA
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pp.301-307 INVITED PAPER Technology Modeling for Emerging SOI Devices Meikei IEONG Phil OLDIGES
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pp.308-313 PAPER Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation Fabian M. BUFLER Christoph ZECHNER Andreas SCHENK Wolfgang FICHTNER
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pp.314-319 PAPER In-Advance CPU Time Analysis for Stationary Monte Carlo Device Simulations Christoph JUNGEMANN Bernd MEINERZHAGEN
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pp.320-324 PAPER Impact of Electron Heat Conductivity on Electron Energy Flux Kazuya MATSUZAWA
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pp.325-329 PAPER Analysis of Injection Current with Electron Temperature for High-K Gate Stacks Yasuyuki OHKURA Hiroyuki TAKASHINO Shoji WAKAHARA Kenji NISHI
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pp.330-335 PAPER Gate Tunnelling and Impact Ionisation in Sub 100 nm PHEMTs Karol KALNA Asen ASENOV
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pp.336-349 INVITED PAPER Hot Carrier Induced Degradation Due to Multi-Phonon Mechanism Analyzed by Lattice and Device Monte Carlo Coupled Simulation Shirun HO Yasuyuki OHKURA Takuya MARUIZUMI Prasad JOSHI Naoki NAKAMURA Shoichi KUBO Sigeo IHARA
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pp.350-356 PAPER Investigation of the Electron Mobility in Strained Si_1-xGe_x at High Ge Composition Sergey SMIRNOV Hans KOSINA Siegfried SELBERHERR
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pp.357-362 PAPER Ensemble Monte Carlo/Molecular Dynamics Simulation of Inversion Layer Mobility in Si MOSFETs--Effects of Substrate Impurity Yoshinari KAMAKURA Hironori RYOUKE Kenji TANIGUCHI
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pp.363-371 INVITED PAPER Quantum Electron Transport Modeling in Nano-Scale Devices Matsuto OGAWA Hideaki TSUCHIYA Tanroku MIYOSHI
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pp.372-378 INVITED PAPER Monte Carlo Study of Electron Transport in a Carbon Nanotube Gary PENNINGTON Neil GOLDSMAN
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pp.379-384 PAPER On Density-Gradient Modeling of Tunneling through Insulators Timm HOHR Andreas SCHENK Andreas WETTSTEIN Wolfgang FICHTNER
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pp.385-390 PAPER Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model Andreas SCHENK Andreas WETTSTEIN
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pp.391-397 PAPER Two-Particle Wave Function of Electrons Coherently Propagating along Quantum Wires Susanna REGGIANI Andrea BERTONI Massimo RUDAN
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pp.398-403 INVITED PAPER A Novel CDM-Like Discharge Effect during Human Body Model (HBM) ESD Stress Valery AXELRAD Yoon HUH Jau-Wen CHEN Peter BENDIX
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pp.404-408 PAPER Simulation Technique of Heating by Contact Resistance for ESD Protection Device Kazuya MATSUZAWA Hirobumi KAWASHIMA Toyoaki MATSUHASHI Naoyuki SHIGYO
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pp.409-415 INVITED PAPER Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator Tatsuya EZAKI Takeo IKEZAWA Akio NOTSU Katsuhiko TANAKA Masami HANE
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pp.416-420 PAPER Statistical Threshold Voltage Fluctuation Analysis by Monte Carlo Ion Implantation Method Yoshinori ODA Yasuyuki OHKURA Kaina SUZUKI Sanae ITO Hirotaka AMAKAWA Kenji NISHI
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pp.421-426 INVITED PAPER An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration Hajdin CERIC Siegfried SELBERHERR
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pp.427-432 PAPER Three-Dimensional Triangle-Based Simulation of Etching Processes and Applications Oliver LENHART Eberhard BAR
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pp.433-438 PAPER Simulation of Substrate Currents Wim SCHOENMAKER Peter MEURIS Wim MAGNUS Bert MALESZKA
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pp.439-446 PAPER Realistic Scaling Scenario for Sub-100 nm Embedded SRAM Based on 3-Dimensional Interconnect Simulation Yasumasa TSUKAMOTO Tatsuya KUNIKIYO Koji NII Hiroshi MAKINO Shuhei IWADE Kiyoshi ISHIKAWA Yasuo INOUE Norihiko KOTANI
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pp.447-452 PAPER TCAD Driven Drain Engineering for Hot Carrier Reduction of 3.3 V I/O PMOSFET Noriyuki MIURA Hirotaka KOMATSUBARA Marie MOCHIZUKI Hirokazu HAYASHI Koichi FUKUDA
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pp.453-458 PAPER A New Non-Pair Diffusion Based Dopant Pile-up Model for Process Designers and Its Prediction Accuracy Hirokazu HAYASHI Noriyuki MIURA Hirotaka KOMATSUBARA Marie MOCHIZUKI Koichi FUKUDA
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pp.459-465 PAPER Automatic Generation of Compact Electro-Thermal Models for Semiconductor Devices Tamara BECHTOLD Evgenii B. RUDNYI Jan G. KORVINK
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pp.466-473 PAPER An Investigation of Magnetic Field Effects on Energy States for Nanoscale InAs/GaAs Quantum Rings and Dots Yiming LI Hsiao-Mei LU
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pp.474-480 INVITED PAPER Circuit-Simulation Model of C_gd Changes in Small-Size MOSFETs Due to High Channel-Field Gradients Dondee NAVARRO Hiroaki KAWANO Kazuya HISAMITSU Takatoshi YAMAOKA Masayasu TANAKA Hiroaki UENO Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA
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Regular Section

pp.481-489 PAPER-Device Modeling and Simulation Simulation of RF Noise in MOSFETs Using Different Transport Models Andreas SCHENK Bernhard SCHMITHUSEN Andreas WETTSTEIN Axel ERLEBACH Simon BRUGGER Fabian M. BUFLER Thomas FEUDEL Wolfgang FICHTNER
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pp.490-495 PAPER-Optoelectronics Analysis of Fiber Endface Shape and Processing Conditions for a Fiber Physical Contact Connector Yoshiteru ABE Masaru KOBAYASHI Shuichiro ASAKAWA Ryo NAGASE
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pp.496-505 PAPER-Electronic Circuits A New Dynamic D-Flip-Flop Aiming at Glitch and Charge Sharing Free Sung-Hyun YANG Younggap YOU Kyoung-Rok CHO
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pp.506-513 PAPER-Electronic Circuits An 8b 200 MHz Time-Interleaved Subranging ADC Based on a Single-Poly Digital CMOS Process Jung-Woong MOON Seung-Hoon LEE
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